Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films - art. no. 062902

[摘要]：Both bi-stable memory and mono-stable threshold switching are observed in amorphous NbOx films. In addition, the transition between memory and threshold switching can be induced by changing external electrical stress. Raman spectroscopy and transmission e

[全文传递流程]：

一般上传文献全文的时限在1个工作日内