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[摘要]：Using ballistic hot electron techniques, we demonstrate lateral spin transport through a bulk Si wafer. Despite a wide spin transport time distribution caused by transport path variation in the 400 mu m-thick Si channel, the absence of a buried interface in close proximity increases the observed spin lifetime to approximately 100 ns at 61 K. The relative insensitivity of this lifetime to temperature variation (and its absolute magnitude) indicates a contribution from an extrinsic depolarization mechanism such as disorder and defects at the exposed air/Si interface in the transport region between injector and detector. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704802] |
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