Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge

[摘要]：We report on the observation by electron spin resonance (ESR) of an anisotropic paramagnetic defect at the interface of epitaxially grown Ge3N4/(111)Ge entities with nanometer thin Ge3N4 layers. The defect exhibits trigonal C-3v symmetry characterized by

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