Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

[摘要]：We investigated the effect of the Sn/Zn ratio in the amorphous Zn-In-Sn-O (ZITO) system on the gate voltage stress-induced stability of the resulting thin film transistors (TFTs). The device stability of the TFTs with a composition channel of Zn: In: Sn=0

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