[摘要]：Multiple data storage memory devices based on the controlled capacitive coupling of trapped electrons are fabricated using highly ordered arrays of metal nanoparticles. Results are presented from metal nanoparticle-based memory devices with controlled nanoparticle charge trapping elements, which undergo gate-voltage-adjustable multilevel memory states. Experimental and theoretical analysis for multilevel data manipulations and visualization of memory states are done on the nanometer scale.
