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  • Topological Insulator Quantum Dot with Tunable Barriers
    [作者:Cho, S; Kim, D; Syers, P; Butch, NP; Paglione, J; Fuhrer, MS,期刊:Nano Letters, 页码:469-472 , 文章类型: Article,,卷期:2012年12-1]
  • Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from ohmic to tunnel...
  • Room-Temperature Photodetection Dynamics of Single GaN Nanowires
    [作者:Gonzalez-Posada, F; Songmuang, R; Den Hertog, M; Monroy, E,期刊:Nano Letters, 页码:172-176 , 文章类型: Article,,卷期:2012年12-1]
  • We report on the photocurrent behavior of single GaN n-i-n nano-wires (NWs) grown by plasma-assisted molecular-beam epitaxy on Si(111). These structures present a photoconductive gain in the range of 10(5)-10(8) and an u...
  • Photon-Drag Effect in Single-Walled Carbon Nanotube Films
    [作者:Mikheev, GM; Nasibulin, AG; Zonov, RG; Kaskela, A; Kauppinen, EI,期刊:Nano Letters, 页码:77-83 , 文章类型: Article,,卷期:2012年12-1]
  • We observed an interaction of single-walled carbon nanotube films with obliquely incident nanosecond laser radiation in visible and infrared regions generating unipolar voltage pulses replicating the shape of the laser p...
  • Ripping Graphene: Preferred Directions
    [作者:Kim, K; Artyukhov, VI; Regan, W; Liu, YY; Crommie, MF; Yakobson, BI; Zettl, A,期刊:Nano Letters, 页码:293-297 , 文章类型: Article,,卷期:2012年12-1]
  • The understanding of crack formation due to applied stress is key to predicting the ultimate mechanical behavior of many solids. Here we present experimental and theoretical studies on cracks or tears in suspended monola...