- Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing
[作者:Lien, YC; Shieh, JM; Huang, WH; Tu, CH; Wang, C; Shen, CH; Dai, BT; Pan, CL; Hu, CM; Yang, FL,期刊:Applied Physics Letters, 页码:143501-143501 , 文章类型: Article,,卷期:2012年100-14]
- The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 mu s under low operating voltages of +/-7V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectri...
- Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy
[作者:Lin, H; Chen, R; Lu, WS; Huo, YJ; Kamins, TI; Harris, JS,期刊:Applied Physics Letters, 页码:141908-141908 , 文章类型: Article,,卷期:2012年100-14]
- SixGe1-x-ySny alloys were grown by molecular beam epitaxy at low temperature, followed by ex-situ annealing. The crystal quality of SixGe1-x-ySny layers was characterized by atomic force microscopy and transmission elect...
- Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films
[作者:Liu, ZY; Zhang, PJ; Meng, Y; Tian, HF; Li, JQ; Pan, XY; Liang, XJ; Chen, DM; Zhao, HW,期刊:Applied Physics Letters, 页码:143506-143506 , 文章类型: Article,,卷期:2012年100-14]
- The influence of interfacial structure on the resistance switching behavior of Ta/Pr0.7Ca0.3MnO3/Pt films was investigated by varying the reactive Ta electrode thickness. Structure and component analyses revealed that a ...
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