- Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach - art. no. 062403
[作者:Nestoklon, MO; Krebs, O; Jaffres, H; Ruttala, S; George, JM; Jancu, JM; Voisin, P,期刊:Applied Physics Letters, 页码:62403-62403 , 文章类型: Article,,卷期:2012年100-6]
- Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaA...
- Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying - art. no. 062102
[作者:Yao, ZQ; He, B; Zhang, L; Zhuang, CQ; Ng, TW; Liu, SL; Vogel, M; Kumar, A; Zhang, WJ; Lee, CS; Lee, ST; Jiang, X,期刊:Applied Physics Letters, 页码:62102-62102 , 文章类型: Article,,卷期:2012年100-6]
- The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d(10) with Cu2+ 3d(9) orbitals in the val...
- Enhanced spontaneous emission from quantum dots in short photonic crystal waveguides - art. no. 061122
[作者:Hoang, TB; Beetz, J; Midolo, L; Skacel, M; Lermer, M; Kamp, M; Hofling, S; Balet, L; Chauvin, N; Fiore, A,期刊:Applied Physics Letters, 页码:61122-61122 , 文章类型: Article,,卷期:2012年100-6]
- We report a study of the quantum dot (QD) emission in short photonic crystal waveguides. We observe that the quantum dot photoluminescence intensity and decay rate are strongly enhanced when the emission energy is in res...
- Manganese dioxide modified silicon nanowires and their excellent catalysis in the decomposition of methylene blue - art. no. 063104
[作者:Gao, WW; Shao, MW; Yang, L; Zhuo, SJ; Ye, SY; Lee, ST,期刊:Applied Physics Letters, 页码:63104-63104 , 文章类型: Article,,卷期:2012年100-6]
- A redox between hydrofluoric acid and ammonium fluoride-treated silicon nanowires and potassium permanganate solution was investigated. The results showed that MnO2 nanoparticles might grow on the surface of silicon nano...
- ZnO nanorods-graphene hybrid structures for enhanced current spreading and light extraction in GaN-based light emitting diodes - art. no. 061107
[作者:Lee, JM; Yi, J; Lee, WW; Jeong, HY; Jung, T; Kim, Y; Park, WI,期刊:Applied Physics Letters, 页码:61107-61107 , 文章类型: Article,,卷期:2012年100-6]
- One-dimensional and two-dimensional hybrid structures, composed of vertical ZnO nanorods grown on large-area graphene, are successfully integrated onto the GaN/InGaN light emitting diodes (LEDs). Compared with GaN LED wi...
- Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field - art. no. 062404
[作者:Gopman, DB; Bedau, D; Mangin, S; Lambert, CH; Fullerton, EE; Katine, JA; Kent, AD,期刊:Applied Physics Letters, 页码:62404-62404 , 文章类型: Article,,卷期:2012年100-6]
- We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry betw...
- Atomic layer deposited (TiO2)(x)(Al2O3)(1-x)/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications - art. no. 062905
[作者:Mahata, C; Mallik, S; Das, T; Maiti, CK; Dalapati, GK; Tan, CC; Chia, CK; Gao, H; Kumar, MK; Chiam, SY; Tan, HR; Seng, HL; Chi, DZ; Miranda, E,期刊:Applied Physics Letters, 页码:62905-62905 , 文章类型: Article,,卷期:2012年100-6]
- Atomic layer deposited (ALD) (TiO2)(x)(Al2O3)(1-x)(TiAlO) alloy gate dielectrics on In0.47Ga0.53As/InP substrates are shown to produce high quality interfaces between TiAlO and InGaAs. The surface morphology and interfac...
- Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals - art. no. 061908
[作者:Dyakov, SA; Zhigunov, DM; Hartel, A; Zacharias, M; Perova, TS; Timoshenko, VY,期刊:Applied Physics Letters, 页码:61908-61908 , 文章类型: Article,,卷期:2012年100-6]
- Using the model of oscillating dipoles, we simulated the photoluminescence intensity of a triple-layered structure where the silicon nanocrystals layer was enclosed by buffer and capping silicon dioxide layers. It was fo...
- Entropy change linked to the magnetic field induced Morin transition in Hematite nanoparticles - art. no. 063102
[作者:Pastor, JM; Perez-Landazabal, JI; Gomez-Polo, C; Recarte, V; Larumbe, S; Santamarta, R; Silva, MF; Pineda, EAG; Hechenleitner, AAW; Lima, MK,期刊:Applied Physics Letters, 页码:63102-63102 , 文章类型: Article,,卷期:2012年100-6]
- The most stable form of iron oxide is Hematite (alpha-Fe2O3), which has interesting electronic, catalytic, and magnetic properties showing size dependent characteristics. At room temperature, Hematite is weakly ferromagn...
- Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics - art. no. 061121
[作者:Majety, S; Li, J; Cao, XK; Dahal, R; Pantha, BN; Lin, JY; Jiang, HX,期刊:Applied Physics Letters, 页码:61121-61121 , 文章类型: Article,,卷期:2012年100-6]
- Recent advances in epitaxial growth and demonstration of p-type conductivity in hexagonal boron nitride (hBN) epilayers represent an exceptional opportunity to revolutionize p-layer approach and overcome the intrinsic pr...
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