- High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures - art. no. 063506
[作者:Wang, SL; Yu, JW; Yeh, PC; Kuo, HW; Peng, LH; Fedyanin, AA; Mishina, ED; Sigov, AS,期刊:Applied Physics Letters, 页码:63506-63506 , 文章类型: Article,,卷期:2012年100-6]
- We investigate the transport properties of thin-film transistors using indium oxide (In2O3)/gallium oxide (Ga2O3) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility...
- Highly tunable whispering gallery mode semiconductor lasers with controlled absorber - art. no. 061112
[作者:Baranov, AN; Boissier, G; Teissier, R; Monakhov, AM; Sherstnev, VV; Larchenkov, MI; Yakovlev, YP,期刊:Applied Physics Letters, 页码:61112-61112 , 文章类型: Article,,卷期:2012年100-6]
- Tunable semiconductor lasers with controlled absorber based on GaInAsSb/GaAlAsSb quantum well heterostructure was fabricated and experimentally studied. The emission wavelength of these lasers shifts from 2.24 to 2.28 mu...
- High-pressure phases of NaAlH4 from first principles - art. no. 061905
[作者:Zhou, XF; Dong, X; Zhao, ZS; Oganov, AR; Tian, YJ; Wang, HT,期刊:Applied Physics Letters, 页码:61905-61905 , 文章类型: Article,,卷期:2012年100-6]
- High-pressure phases of NaAlH4 are predicted using the ab initio evolutionary algorithm. our first-principles calculations reveal that the low-pressure I4(1)/a phase containing AlH4 tetrahedra transforms into the monocli...
- Parabolic polarization splitting of Tamm states in a metal-organic microcavity - art. no. 062101
[作者:Bruckner, R; Sudzius, M; Hintschich, SI; Frob, H; Lyssenko, VG; Kaliteevski, MA; Iorsh, I; Abram, RA; Kavokin, AV; Leo, K,期刊:Applied Physics Letters, 页码:62101-62101 , 文章类型: Article,,卷期:2012年100-6]
- We observe hybrid states of cavity photons and Tamm plasmons in an organic microcavity with an incorporated thin silver layer of increasing thickness up to 40 nm. Via mu-photoluminescence spectroscopy, we investigate the...
- The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories - art. no. 063509
[作者:Wang, LH; Yang, W; Sun, QQ; Zhou, P; Lu, HL; Ding, SJ; Zhang, DW,期刊:Applied Physics Letters, 页码:63509-63509 , 文章类型: Article,,卷期:2012年100-6]
- Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile resistive switching memory based on GO was fabricated through a spin-co...
- Development of tilted hexagonal platelet ZnO using atmospheric pressure chemical vapor deposition and investigation of its growth mechanism - art. no. 061909
[作者:Yoo, YZ; Kim, SH; Yoon, GS; Choi, EH; Park, JW; Park, JH; Kim, BG; Jung, SC; Park, BM,期刊:Applied Physics Letters, 页码:61909-61909 , 文章类型: Article,,卷期:2012年100-6]
- Large area ZnO films (25 x 25 cm(2)) grown via atmospheric pressure chemical vapor deposition (APCVD) showed unique surface morphologies of tilted hexagonal platelets. In response to the tilt angle change from 50 degrees...
- High-strength titanium alloy nanopillars with stacking faults and enhanced plastic flow - art. no. 063109
[作者:Yu, Q; Li, SZ; Minor, AM; Sun, J; Ma, E,期刊:Applied Physics Letters, 页码:63109-63109 , 文章类型: Article,,卷期:2012年100-6]
- Through ex situ and in situ compression and tension tests of micrometer- and submicrometer-sized single crystal hexagonal close packed (HCP) Ti alloy pillars oriented for prismatic slip, we have observed that "smaller is...
- Horizontally aligned ZnO nanowire transistors using patterned graphene thin films - art. no. 063112
[作者:Kim, H; Park, JH; Suh, M; Ahn, JR; Ju, S,期刊:Applied Physics Letters, 页码:63112-63112 , 文章类型: Article,,卷期:2012年100-6]
- Here we report the directed growth of ZnO nanowires on multilayer graphene films (MGFs) without the use of metal seed materials. The ZnO source substance was diffused onto the MGF surface, where nanowires tended to grow ...
- Thermal and structural dependence of the band gap of quantum dots measured by a transparent film heater - art. no. 063105
[作者:Woo, JY; Tripathy, SK; Kim, K; Han, CS,期刊:Applied Physics Letters, 页码:63105-63105 , 文章类型: Article,,卷期:2012年100-6]
- We report the temperature dependence of the optical absorption and emission spectra of quantum dots (QDs) for three different nanocrystal (NC) structures (CdSe core, CdSe/CdS core/shell, and CdSe/CdS/ZnS core/multishell)...
- Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors - art. no. 063505
[作者:El Kazzi, M; Czornomaz, L; Rossel, C; Gerl, C; Caimi, D; Siegwart, H; Fompeyrine, J; Marchiori, C,期刊:Applied Physics Letters, 页码:63505-63505 , 文章类型: Article,,卷期:2012年100-6]
- Metal-oxide-semiconductor (MOS) capacitors were fabricated by depositing composite 2 nm HfO2/1 nm Al2O3/1 nm a-Si gate stacks on p-In0.53Ga0.47As/InP (001) substrates. Thanks to the presence of the Al2O3 barrier layer, a...
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