- Understanding ultrafast carrier dynamics in single quasi-one-dimensional Si nanowires - art. no. 071104
[作者:Seo, MA; Dayeh, SA; Upadhya, PC; Martinez, JA; Swartzentruber, BS; Picraux, ST; Taylor, AJ; Prasankumar, RP,期刊:Applied Physics Letters, 页码:71104-71104 , 文章类型: Article,,卷期:2012年100-7]
- We use femtosecond optical pump-probe spectroscopy to study ultrafast carrier dynamics in single quasi-one-dimensional silicon nanowires. By isolating individual nanowires, we avoid complications resulting from the broad...
- Altering the sulfur content in the propanethiol plasma polymers using the capacitive-to-inductive mode transition in inductively coupled plasma discharge - art. no. 071604
[作者:Thiry, D; Britun, N; Konstantinidis, S; Dauchot, JP; Denis, L; Snyders, R,期刊:Applied Physics Letters, 页码:71604-71604 , 文章类型: Article,,卷期:2012年100-7]
- The effect of the transition from capacitive (E) to inductive (H) mode on propanethiol plasma polymer films properties was investigated by optical emission as well as by x-ray photoelectron spectroscopy. The E mode is ch...
- Role of aluminum as an oxygen-scavenger in zirconium based bulk metallic glasses - art. no. 071909
[作者:Heinrich, J; Busch, R; Muller, F; Grandthyll, S; Hufner, S,期刊:Applied Physics Letters, 页码:71909-71909 , 文章类型: Article,,卷期:2012年100-7]
- In order to investigate a way to diminish the impact of oxygen onto the critical cooling rate of Zr-based alloys, the bonding chemistry of the elements in Zr-Cu-Ni-Al-Nb-Si bulk metallic glasses with different oxygen con...
- Sample size effects on the large strain bursts in submicron aluminum pillars - art. no. 071906
[作者:Wang, ZJ; Li, QJ; Shan, ZW; Li, J; Sun, J; Ma, E,期刊:Applied Physics Letters, 页码:71906-71906 , 文章类型: Article,,卷期:2012年100-7]
- In situ transmission electron microscope compression testing of submicron Al pillars shows two sample size regimes with contrasting behavior underlying the large strain bursts. For small pillars, the bursts originate fro...
- Anisotropic bimodal distribution of blocking temperature with multiferroic BiFeO3 epitaxial thin films - art. no. 072402
[作者:Safeer, CK; Chamfrault, M; Allibe, J; Carretero, C; Deranlot, C; Jacquet, E; Jacquot, JF; Bibes, M; Barthelemy, A; Dieny, B; Bea, H; Baltz, V,期刊:Applied Physics Letters, 页码:72402-72402 , 文章类型: Article,,卷期:2012年100-7]
- Controlling BiFeO3 (BFO)/ferromagnet (FM) interfacial coupling appears crucial for electrical control of spintronic devices using this multiferroic. Here, we analyse the magnetic behaviour of exchange-biased epitaxial-Bi...
- Low operation voltage and high thermal stability of a WSi2 nanocrystal memory device using an Al2O3/HfO2/Al2O3 tunnel layer - art. no. 072901
[作者:Lee, DU; Lee, HJ; Kim, EK; You, HW; Cho, WJ,期刊:Applied Physics Letters, 页码:72901-72901 , 文章类型: Article,,卷期:2012年100-7]
- A WSi2 nanocrystal nonvolatile memory device was fabricated with an Al2O3/HfO2/Al2O3 (AHA) tunnel layer and its electrical characteristics were evaluated at 25, 50, 70, 100, and 125 degrees C. The program/erase (P/E) spe...
- Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination - art. no. 071910
[作者:Kim, TS; Ahn, BJ; Dong, Y; Park, KN; Lee, JG; Moon, Y; Yuh, HK; Choi, SC; Lee, JH; Hong, SK; Song, JH,期刊:Applied Physics Letters, 页码:71910-71910 , 文章类型: Article,,卷期:2012年100-7]
- We experimentally investigated well-to-well non-uniformity in InGaN/GaN multiple quantum well (MQW) structures by using capacitance-voltage measurements with additional laser illumination. By varying the illuminating pow...
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