- Electron trap liberation in MgF2 doped with Yb2+ using a two-color excitation experiment - art. no. 041902
[作者:Senanayake, PS; Wells, JPR; Reid, MF; Berden, G; Meijerink, A; Reeves, RJ,期刊:Applied Physics Letters, 页码:41902-41902 , 文章类型: Article,,卷期:2012年100-4]
- We utilize the optical transitions of Yb2+ excited by an ultraviolet optical parametric amplifier to probe electron trap liberation in MgF2 via the observation of a photoluminescence enhancement effect induced by a subse...
- Lattice locations and properties of Fe in Co/Fe co-implanted ZnO - art. no. 042109
[作者:Gunnlaugsson, HP; Johnston, K; Molholt, TE; Weyer, G; Mantovan, R; Masenda, H; Naidoo, D; Olafsson, S; Bharuth-Ram, K; Gislason, HP; Langouche, G; Madsen, MB,期刊:Applied Physics Letters, 页码:42109-42109 , 文章类型: Article,,卷期:2012年100-4]
- The lattice locations and electronic configurations of Fe in Co-57/(57) Fe implanted ZnO (to (5-6) x 10(14) Fe/cm(-2)) have been studied by Fe-57 Mossbauer emission spectroscopy. The spectra acquired upon room temperatur...
- Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors - art. no. 043504
[作者:Tut, T; Dan, YP; Duane, P; Yu, Y; Wober, M; Crozier, KB,期刊:Applied Physics Letters, 页码:43504-43504 , 文章类型: Article,,卷期:2012年100-4]
- We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performe...
- Enhanced magnetic properties of Dy3+ substituted Ni-Cu-Zn ferrite nanoparticles - art. no. 042407
[作者:Shirsath, SE; Kadam, RH; Patange, SM; Mane, ML; Ghasemi, A; Morisako, A,期刊:Applied Physics Letters, 页码:42407-42407 , 文章类型: Article,,卷期:2012年100-4]
- Dy3+ substituted Ni-Cu-Zn (Ni0.4Cu0.4Zn0.2DyxFe2-xO4) ferrite nanoparticles were obtained at 600 degrees C by synthesizing sol-gel auto-combustion method, and they exhibit a particle size of 12-21 nm. X-ray diffraction p...
- Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment - art. no. 042104
[作者:Ruggeri, R; Neri, F; Sciuto, A; Privitera, V; Spinella, C; Mannino, G,期刊:Applied Physics Letters, 页码:42104-42104 , 文章类型: Article,,卷期:2012年100-4]
- We investigated optical, structural, and chemical properties of SiOxNy layers irradiated by CW IR laser during a time lapse of few milliseconds. We observed tunable photoluminescence signal at room temperature in the ran...
- Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels - art. no. 043109
[作者:Khan, J; Nolen, CM; Teweldebrhan, D; Wickramaratne, D; Lake, RK; Balandin, AA,期刊:Applied Physics Letters, 页码:43109-43109 , 文章类型: Article,,卷期:2012年100-4]
- The authors report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers ...
- Evidence of direct correlation between out-of-plane lattice parameter and metal-insulator transition temperature in oxygen-depleted manganite thin films - art. no. 042404
[作者:Orgiani, P; Petrov, AY; Ciancio, R; Galdi, A; Maritato, L; Davidson, BA,期刊:Applied Physics Letters, 页码:42404-42404 , 文章类型: Article,,卷期:2012年100-4]
- We report on the role of oxygen content alone on structural and transport properties of La0.65Sr0.35MnO3-delta (LSMO) thin films. Identical films were deposited side-by-side during a single deposition run and subsequentl...
- Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron - art. no. 042110
[作者:Forster, M; Fourmond, E; Rougieux, FE; Cuevas, A; Gotoh, R; Fujiwara, K; Uda, S; Lemiti, M,期刊:Applied Physics Letters, 页码:42110-42110 , 文章类型: Article,,卷期:2012年100-4]
- We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observ...
- Evidence of ferroelectricity and phase transition in pressed diphenylalanine peptide nanotubes - art. no. 043702
[作者:Bdikin, I; Bystrov, V; Kopyl, S; Lopes, RPG; Delgadillo, I; Gracio, J; Mishina, E; Sigov, A; Kholkin, AL,期刊:Applied Physics Letters, 页码:43702-43702 , 文章类型: Article,,卷期:2012年100-4]
- Self-assembled peptide nanotubes (PNT) are unique nanoscale objects having a great potential for a multitude of applications. Strong piezoactivity and polar properties in aromatic dipeptides were recently observed in sta...
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