- Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment - art. no. 263501
[作者:Chang, KC; Tsai, TM; Chang, TC; Syu, YE; Wang, CC; Chuang, SL; Li, CH; Gan, DS; Sze, SM,期刊:Applied Physics Letters, 页码:63501-63501 , 文章类型: Article,,卷期:2011年99-26]
- In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved g...
- The origin and consequences of push-pull breakdown in series connected dielectrics - art. no. 263506
[作者:Masuduzzaman, M; Varghese, D; Guo, HL; Krishnan, S; Alam, MA,期刊:Applied Physics Letters, 页码:63506-63506 , 文章类型: Article,,卷期:2011年99-26]
- Given the extensive literature on the dielectric failure probability (F) of single as well as sandwich capacitors, one might conclude that the overall failure probability of k series connected (SC) capacitors is simply g...
- Single and dual band 77/95/110 GHz metamaterial absorbers on flexible polyimide substrate - art. no. 264101
[作者:Singh, PK; Korolev, KA; Afsar, MN; Sonkusale, S,期刊:Applied Physics Letters, 页码:64101-64101 , 文章类型: Article,,卷期:2011年99-26]
- Ultra thin millimeter-wave absorbers on flexible polyimide substrate utilizing metamaterials are implemented for single and dual frequency bands in an emerging frequency spectrum of 77, 95, and 110 GHz. The dual band abs...
- Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers - art. no. 263101
[作者:Liu, RB; Zhuang, XJ; Xu, JY; Li, DB; Zhang, QL; Ding, K; He, PB; Ning, CZ; Zou, BS; Pan, AL,期刊:Applied Physics Letters, 页码:63101-63101 , 文章类型: Article,,卷期:2011年99-26]
- High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from ...
- Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yield - art. no. 263304
[作者:Yu, LY; Li, XR; Pavlica, E; Loth, MA; Anthony, JE; Bratina, G; Kjellander, C; Gelinck, G; Stingelin, N,期刊:Applied Physics Letters, 页码:63304-63304 , 文章类型: Article,,卷期:2011年99-26]
- Here, we report a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene that requires one single processing step without the nee...
- Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography - art. no. 261911
[作者:Cooper, D; Rouviere, JL; Beche, A; Kadkhodazadeh, S; Semenova, ES; Yvind, K; Dunin-Borkowski, R,期刊:Applied Physics Letters, 页码:61911-61911 , 文章类型: Article,,卷期:2011年99-26]
- The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resol...
- Thermal expansion coefficients of Bi2Se3 and Sb2Te3 crystals from 10 K to 270 K - art. no. 261912
[作者:Chen, X; Zhou, HD; Kiswandhi, A; Miotkowski, I; Chen, YP; Sharma, PA; Sharma, ALL; Hekmaty, MA; Smirnov, D; Jiang, Z,期刊:Applied Physics Letters, 页码:61912-61912 , 文章类型: Article,,卷期:2011年99-26]
- Lattice constant of Bi2Se3 and Sb2Te3 crystals is determined by x-ray powder diffraction measurement in a wide temperature range. Linear thermal expansion coefficients (alpha) of the crystals are extracted, and considera...
- Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy - art. no. 261910
[作者:Xia, Y; Brault, J; Nemoz, M; Teisseire, M; Vinter, B; Leroux, M; Chauveau, JM,期刊:Applied Physics Letters, 页码:61910-61910 , 文章类型: Article,,卷期:2011年99-26]
- Nonpolar (11 (2) over bar0) Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (11 (2) over bar0) Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit ...
- Origin of charge separation in III-nitride nanowires under strain - art. no. 262103
[作者:Wu, YL; Chen, GD; Wei, SH; Al-Jassim, MM; Yan, YF,期刊:Applied Physics Letters, 页码:62103-62103 , 文章类型: Article,,卷期:2011年99-26]
- The structural and electronic properties of BN, AlN, and GaN nanowires (NWs) under different strain condition are investigated using first-principles calculations. We found an anomaly of band gap change with respect to t...
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