- Observation of a snap-through instability in graphene - art. no. 021910
[作者:Scharfenberg, S; Mansukhani, N; Chialvo, C; Weaver, RL; Mason, N,期刊:Applied Physics Letters, 页码:21910-21910 , 文章类型: Article,,卷期:2012年100-2]
- We examine the competition between adhesive and bending energies for few-layer graphene (FLG) samples placed on microscale-corrugated metallic substrates. Using atomic force microscopy, we show that the graphene undergoe...
- Ohmic contacts to n-type germanium with low specific contact resistivity - art. no. 022113
[作者:Gallacher, K; Velha, P; Paul, DJ; MacLaren, I; Myronov, M; Leadley, DR,期刊:Applied Physics Letters, 页码:22113-22113 , 文章类型: Article,,卷期:2012年100-2]
- A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.361.8) x 10(-7) Omega-cm(2) for anneal temperatures of 340 degrees C. Th...
- Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate - art. no. 023302
[作者:Sleiman, A; Rosamond, MC; Martin, MA; Ayesh, A; Al Ghaferi, A; Gallant, AJ; Mabrook, MF; Zeze, DA,期刊:Applied Physics Letters, 页码:23302-23302 , 文章类型: Article,,卷期:2012年100-2]
- A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to ach...
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