- Temperature dependence of ultrafast phonon dynamics in graphite - art. no. 211908
[作者:Scheuch, M; Kampfrath, T; Wolf, M; von Volkmann, K; Frischkorn, C; Perfetti, L,期刊:Applied Physics Letters, 页码:11908-11908 , 文章类型: Article,,卷期:2011年99-21]
- Nonequilibrium optical phonons are generated in graphite following the excitation of electron-hole pairs with a femtosecond laser pulse. Their energy relaxation is probed by means of terahertz pulses. We find that the ho...
- Quantifying pulsed laser induced damage to graphene - art. no. 211909
[作者:Currie, M; Caldwell, JD; Bezares, FJ; Robinson, J; Anderson, T; Chun, HD; Tadjer, M,期刊:Applied Physics Letters, 页码:11909-11909 , 文章类型: Article,,卷期:2011年99-21]
- As an emerging optical material, graphene's ultrafast dynamics are often probed using pulsed lasers yet the region in which optical damage takes place is largely uncharted. Here, femtosecond laser pulses induced localize...
- Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111) - art. no. 211910
[作者:Sanchez, F; Bachelet, R; de Coux, P; Warot-Fonrose, B; Skumryev, V; Tarnawska, L; Zaumseil, P; Schroeder, T; Fontcuberta, J,期刊:Applied Physics Letters, 页码:11910-11910 , 文章类型: Article,,卷期:2011年99-21]
- Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17%) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (11...
- A local defect resonance to enhance acoustic wave-defect interaction in ultrasonic nondestructive evaluation - art. no. 211911
[作者:Solodov, I; Bai, JX; Bekgulyan, S; Busse, G,期刊:Applied Physics Letters, 页码:11911-11911 , 文章类型: Article,,卷期:2011年99-21]
- It is experimentally shown that, to provide maximum acoustic wave-defect interaction, the concept of a local defect resonance should be applied. The model of a resonant defect is used for the selection of the wave freque...
- Atomic-scale determination of band offsets at the Gd2O3/GaAs (100) hetero-interface using scanning tunneling spectroscopy - art. no. 212101
[作者:Chiu, YP; Huang, BC; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; Hong, M; Kwo, J,期刊:Applied Physics Letters, 页码:12101-12101 , 文章类型: Article,,卷期:2011年99-21]
- Direct measurements of band profile and band offsets across the Gd2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the loca...
- Graphene arch gate SiO2 shell silicon nanowire core field effect transistors - art. no. 212102
[作者:Jin, JE; Lee, JH; Hwang, DH; Kim, DW; Kim, MJ; Son, KS; Whang, D; Hwang, SW,期刊:Applied Physics Letters, 页码:12102-12102 , 文章类型: Article,,卷期:2011年99-21]
- We report the realization of graphene arch gate silicon nanowire field effect transistors with SiO2 shell serving as a gate insulator. The arch coverage of the SiO2 shell was achieved by the flexible graphene layers comp...
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