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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共100条记录   Ordered silicon nanocones arrays for label-free DNA quantitative analysis by surface-enhanced Raman spectroscopy - art. no. 153116 [作者：Xu, TT; Huang, JA; He, LF; He, Y; Su, S; Lee, ST,期刊：Applied Physics Letters, 页码：53116-53116 , 文章类型： Article，,卷期：2011年99-15] Ordered vertical silicon nanocones arrays coated with silver nanoparticies (AgNPs@SiNCs) arc developed as surface-enhanced Raman scattering (SERS)-active substrate, which features good uniformity and reliable reproducibi... Low-loss polymer waveguides on nanoporous layers - art. no. 153301 [作者：Wicht, G; Ferrini, R; Schuttel, S; Zuppiroli, L,期刊：Applied Physics Letters, 页码：53301-53301 , 文章类型： Article，,卷期：2011年99-15] Multimode planar polymer waveguides were fabricated on hybrid polymer nanoporous layers with a fast industrial aqueous-based method well adapted to coat large-surface plastic substrates and easily scalable up to economic... Small molecular organic photovoltaic cells with exciton blocking layer at anode interface for improved device performance - art. no. 153302 [作者：Hirade, M; Adachi, C,期刊：Applied Physics Letters, 页码：53302-53302 , 文章类型： Article，,卷期：2011年99-15] We demonstrate enhanced power conversion efficiency (eta(PCE)) for small molecular-based organic photovoltaic cells with an exciton blocking layer (ExBL) at the anode/donor interface. Although poly(3,4-ethylenedioxythiop... Indium-tin-oxide-free tris(8-hydroxyquinoline) Al organic light-emitting diodes with 80% enhanced power efficiency - art. no. 153303 [作者：Cai, M; Xiao, T; Liu, R; Chen, Y; Shinar, R; Shinar, J,期刊：Applied Physics Letters, 页码：53303-53303 , 文章类型： Article，,卷期：2011年99-15] Efficient indium tin oxide (ITO)-free small molecule organic light-emitting diodes (SMOLEDs) with multilayered highly conductive poly(3,4-ethylenedioxy thiophene):poly(styrenesulfonate) (PEDOT:PSS) as the anode are demon... Improving the efficiency of polymer solar cells by incorporating gold nanoparticles into all polymer layers - art. no. 153304 [作者：Xie, FX; Choy, WCH; Wang, CCD; Sha, WEI; Fung, DDS,期刊：Applied Physics Letters, 页码：53304-53304 , 文章类型： Article，,卷期：2011年99-15] We demonstrate efficiency improvement in polymer solar cells (PSCs) by similar to 22% through incorporating Au nanoparticles (NPs) into all polymer layers, Au NPs are found to have distinct mechanisms in improving device... MoO3 doped 4,4 '-N,N '-dicarbazole-biphenyl for low voltage organic light emitting diodes - art. no. 153305 [作者：Qiu, J; Wang, ZB; Helander, MG; Lu, ZH,期刊：Applied Physics Letters, 页码：53305-53305 , 文章类型： Article，,卷期：2011年99-15] MoO3 doped 4,4'-N,V-dicarbazole-biphenyl (CBP) was found to provide significantly reduced driving voltage when used as a hole transport layer (HTL) in organic light emitting diodes (OLEDs). Up to 70% improvement in power... Magnetic properties of tris(8-hydroxyquinoline)iron: Experimental and theoretical investigation - art. no. 153306 [作者：Pang, ZY; Lin, L; Wang, FG; Fang, SJ; Dai, Y; Han, SH,期刊：Applied Physics Letters, 页码：53306-53306 , 文章类型： Article，,卷期：2011年99-15] The magnetic properties of tris(8-hydroxyquinoline)iron (Feq(3)) are Investigated by experiments and first-principles density functional theory. In contrast to the diamagnetic behavior of Alq(3), the Feq3 films deposited... Plastic evanescent microlaser - art. no. 153307 [作者：Kobayashi, T; Byrne, N,期刊：Applied Physics Letters, 页码：53307-53307 , 文章类型： Article，,卷期：2011年99-15] Lasing has been demonstrated in a photopumped microcavity via evanescent-wave-coupledgain. A 50-mu m-diameter unclad quartz fiber is coated with a polymer gain layer having a refractive index lower than that of the quart... Boundary symmetry-stabilized memory in mono-layered cholesteric capsules - art. no. 153308 [作者：Lee, JH; Lee, BY,期刊：Applied Physics Letters, 页码：53308-53308 , 文章类型： Article，,卷期：2011年99-15] The bistable memory of a cholesteric liquid crystal often disappears owing to the unstable orientation of the focal conic state. We demonstrated the stabilization of the memory by controlling the boundary symmetry of a m... Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode - art. no. 153501 [作者：Yang, LA; He, HB; Mao, W; Hao, Y,期刊：Applied Physics Letters, 页码：53501-53501 , 文章类型： Article，,卷期：2011年99-15] We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quant... Enhanced dc magnetic field sensitivity by improved flux concentration in magnetoelectric laminates - art. no. 153502 [作者：Gao, JQ; Gray, D; Shen, Y; Li, JF; Viehland, D,期刊：Applied Physics Letters, 页码：53502-53502 , 文章类型： Article，,卷期：2011年99-15] In this letter, we present magnetostatic modeling results that show significant magnetic field concentration tunability through geometric modification of high-mu tnagnetostatic Metglas layers of laminate magnetoelectric ... Room-temperature organic-based spin polarizer - art. no. 153503 [作者：Li, B; Kao, CY; Lu, Y; Yoo, JW; Prigodin, VN; Epstein, AJ,期刊：Applied Physics Letters, 页码：53503-53503 , 文章类型： Article，,卷期：2011年99-15] We report a magnetic tunnel junction operating at room-temperature with organic magnetic semiconductor V[TCNE](x) (x similar to 2, TCNE: tetracyanoethylene) and Fe as the spin polarizer and analyzer while 10 mu rubrene l... 110 GHz measurement of large-area graphene integrated in low-loss microwave structures - art. no. 153504 [作者：Skulason, HS; Nguyen, HV; Guermoune, A; Sridharan, V; Siaj, M; Caloz, C; Szkopek, T,期刊：Applied Physics Letters, 页码：53504-53504 , 文章类型： Article，,卷期：2011年99-15] We report high-frequency scattering parameter measurement of large-area monolayer graphene integrated on low-loss quartz substrates. High-quality graphene was grown by chemical vapour deposition on copper, chemically hol... AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer - art. no. 153505 [作者：Lee, KH; Chang, PC; Chang, SJ,期刊：Applied Physics Letters, 页码：53505-53505 , 文章类型： Article，,卷期：2011年99-15] In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This "earlier" passivation by i... Origin of the dark-current ideality factor in polymer:fullerene bulk heterojunction solar cells - art. no. 153506 [作者：Wetzelaer, GAH; Kuik, M; Lenes, M; Blom, PWM,期刊：Applied Physics Letters, 页码：53506-53506 , 文章类型： Article，,卷期：2011年99-15] In organic bulk heterojunction solar cells, a deviation of the ideality factor of the dark current from unity is commonly put forward as evidence for the presence of trap-assisted recombination. We demonstrate that the n... ZnO nanowire transistor inverter using top-gate electrodes with different work functions - art. no. 153507 [作者：Lee, YT; Kim, JK; Ha, R; Choi, HJ; Im, S,期刊：Applied Physics Letters, 页码：53507-53507 , 文章类型： Article，,卷期：2011年99-15] ZnO-nanowire field effect transistors (FETs) with a top gate Al2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective wo...