- Symmetry-dependence of electronic grain boundary properties in polycrystalline CuInSe2 thin films - art. no. 172102
[作者:Baier, R; Abou-Ras, D; Rissom, T; Lux-Steiner, MC; Sadewasser, S,期刊:Applied Physics Letters, 页码:72102-72102 , 文章类型: Article,,卷期:2011年99-17]
- The symmetry-dependence of electronic grain boundary (GB) properties in polycrystalline CuInSe2 thin films was investigated in a combined study applying scanning electron microscopy, electron backscatter diffraction, and...
- Metal-insulator transition at a depleted LaAlO3/SrTiO3 interface: Evidence for charge transfer induced by SrTiO3 phase transitions - art. no. 172103
[作者:Lu, WM; Wang, X; Liu, ZQ; Dhar, S; Annadi, A; Gopinadhan, K; Barman, AR; Su, HB; Venkatesan, T; Ariando,期刊:Applied Physics Letters, 页码:72103-72103 , 文章类型: Article,,卷期:2011年99-17]
- Two anomalous bias dependent resistive peaks induced by the SrTiO3 structural phase transitions at 55 and 110 K were observed in a LaAlO3/SrTiO3 and Nb:SrTiO3 rectifying junction when the LaAlO3/SrTiO3 was depleted under...
- Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions - art. no. 172108
[作者:Hacohen-Gourgy, S; Diamant, I; Almog, B; Dubi, Y; Deutscher, G,期刊:Applied Physics Letters, 页码:72108-72108 , 文章类型: Article,,卷期:2011年99-17]
- We present the tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM [Y. Zhang...
- Composition dependent-magnetocaloric effect and low room-temperature coefficient of resistivity study of iron-based antiperovskite compounds Sn1-xGaxCFe3 (0 <= x <= 1.0) - art. no. 172503
[作者:Lin, S; Wang, BS; Lin, JC; Zhang, L; Hu, XB; Huang, YN; Lu, WJ; Zhao, BC; Tong, P; Song, WH; Sun, YP,期刊:Applied Physics Letters, 页码:72503-72503 , 文章类型: Article,,卷期:2011年99-17]
- We present the magnetic/structural phase diagram of Sn1-xGaxCFe3 (0 <= x <= 1). With increasing x, Curie temperature (T-C) and saturated magnetization increase while lattice constant decreases. The results indicate that ...
- Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors - art. no. 172901
[作者:Galatage, RV; Dong, H; Zhernokletov, DM; Brennan, B; Hinkle, CL; Wallace, RM; Vogel, EM,期刊:Applied Physics Letters, 页码:72901-72901 , 文章类型: Article,,卷期:2011年99-17]
- The interface trap density (D-it) and bonding of the HfO2/InP interface is investigated. The energy distribution of interface states extracted using capacitance-voltage measurements show a peak near midgap in InP and a t...
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