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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共61条记录   Photoluminescence and extinction enhancement from ZnO films embedded with Ag nanoparticles [作者：Liu, M; Qu, SW; Yu, WW; Bao, SY; Ma, CY; Zhang, QY; He, J; Jiang, JC; Meletis, EI; Chen, CL,期刊：Applied Physics Letters, 页码：231906-231906 , 文章类型： Article，,卷期：2010年97-23] ZnO films embedded with Ag nanoparticles are deposited at 750 degrees C with a reactive radio-frequency magnetron sputtering. The films are found to have a large enhancement in the intensity of photoluminescence emission... Identification of zinc and oxygen vacancy states in nonpolar ZnO single crystal using polarized photoluminescence [作者：Liu, J; Zhao, Y; Jiang, YJ; Lee, CM; Liu, YL; Siu, GG,期刊：Applied Physics Letters, 页码：231907-231907 , 文章类型： Article，,卷期：2010年97-23] Polarized photoluminescence spectra of the nonpolar ZnO single crystals annealed at different temperatures in air were investigated, for which the whole emission spectra from visible up to ultraviolet range for zinc and ... Promotion of hydrogen production using spectrally controlled thermal radiation [作者：Maegami, Y; Iguchi, F; Yugami, H,期刊：Applied Physics Letters, 页码：231908-231908 , 文章类型： Article，,卷期：2010年97-23] By controlling the thermal radiation spectrum using surface grating technologies, we promote the methane steam reforming to produce hydrogen. We fabricated a two-dimensional surface grating to tune its thermal emittance ... Effect of relative humidity on contact angle and particle deposition morphology of an evaporating colloidal drop [作者：Chhasatia, VH; Joshi, AS; Sun, Y,期刊：Applied Physics Letters, 页码：231909-231909 , 文章类型： Article，,卷期：2010年97-23] The deposition behavior of inkjet-printed aqueous colloidal drops on a glass substrate has been investigated by using fluorescence microscopy and a high resolution goniometer. Real-time side-view images of a pinned collo... Valence-band splittings in cubic and hexagonal AlN, GaN, and InN [作者：de Carvalho, LC; Schleife, A; Fuchs, F; Bechstedt, F,期刊：Applied Physics Letters, 页码：232101-232101 , 文章类型： Article，,卷期：2010年97-23] Modern parameter-free band-structure calculations are applied to the uppermost valence bands near the Gamma point. They are based on a nonlocal exchange-correlation starting point for the iteration of the quasiparticle e... High switching endurance in TaOx memristive devices [作者：Yang, JJ; Zhang, MX; Strachan, JP; Miao, F; Pickett, MD; Kelley, RD; Medeiros-Ribeiro, G; Williams, RS,期刊：Applied Physics Letters, 页码：232102-232102 , 文章类型： Article，,卷期：2010年97-23] We demonstrate over 1 x 10(10) open-loop switching cycles from a simple memristive device stack of Pt/TaOx/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-st... Stable bipolar surface potential behavior of copper-doped zinc oxide films studied by Kelvin probe force microscopy [作者：Wong, MF; Herng, TS; Zhang, ZK; Zeng, KY; Ding, J,期刊：Applied Physics Letters, 页码：232103-232103 , 文章类型： Article，,卷期：2010年97-23] The surface potential of undoped and copper-doped zinc oxide (ZnO:Cu) films has been studied using the Kelvin probe force microscopy at ambient condition. In contrast to the undoped ZnO with unipolar behavior, the ZnO:Cu... Work function shifts, Schottky barrier height, and ionization potential determination of thin MgO films on Ag(001) [作者：Jaouen, T; Jezequel, G; Delhaye, G; Lepine, B; Turban, P; Schieffer, P,期刊：Applied Physics Letters, 页码：232104-232104 , 文章类型： Article，,卷期：2010年97-23] The electronic band structure and the work function of MgO thin films epitaxially grown on Ag(001) have been investigated using x-ray and ultraviolet photoelectron spectroscopy for various oxide thicknesses. The depositi... Surface polar phonon dominated electron transport in graphene [作者：Li, X; Barry, EA; Zavada, JM; Nardelli, MB; Kim, KW,期刊：Applied Physics Letters, 页码：232105-232105 , 文章类型： Article，,卷期：2010年97-23] The effects of surface polar phonons on the electronic transport properties of monolayer graphene are studied by using a Monte Carlo simulation. Specifically, the low-field electron mobility and saturation velocity are e... High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1-xN/GaN heterostructures [作者：Song, J; Xu, FJ; Yan, XD; Lin, F; Huang, CC; You, LP; Yu, TJ; Wang, XQ; Shen, B; Wei, K; Liu, XY,期刊：Applied Physics Letters, 页码：232106-232106 , 文章类型： Article，,卷期：2010年97-23] A correlation between microstructures and high gate leakage current density of Schottky contacts on lattice-matched InxAl1-xN/GaN heterostructures has been investigated by means of current-voltage measurements, conductiv... Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy [作者：Radhakrishnan, K; Dharmarasu, N; Sun, Z; Arulkumaran, S; Ng, GI,期刊：Applied Physics Letters, 页码：232107-232107 , 文章类型： Article，,卷期：2010年97-23] AlGaN/GaN high-electron-mobility transistor structures grown on 100 mm high-resistivity Si(111) substrates using plasma-assisted molecular beam epitaxy are reported. The two-dimensional electron gas (2DEG) formation in t... CoIr-carbon complexes with magnetic anisotropies larger than 0.2 eV: A density-functional-theory prediction [作者：Xiao, RJ; Kuz'min, MD; Koepernik, K; Richter, M,期刊：Applied Physics Letters, 页码：232501-232501 , 文章类型： Article，,卷期：2010年97-23] We report a density-functional study of the heteronuclear CoIr dimer adsorbed on benzene or graphene. In either case, CoIr prefers an upright position above the center of a carbon hexagon with the Co atom next to it. The... Intrinsic room temperature ferromagnetism in boron-doped ZnO [作者：Xu, XG; Yang, HL; Wu, Y; Zhang, DL; Wu, SZ; Miao, J; Jiang, Y; Qin, XB; Cao, XZ; Wang, BY,期刊：Applied Physics Letters, 页码：232502-232502 , 文章类型： Article，,卷期：2010年97-23] We report room temperature ferromagnetism in boron-doped ZnO both experimentally and theoretically. The single phase Zn1-xBxO films deposited under high oxygen pressure by pulsed laser deposition show ferromagnetic behav...