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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共99条记录   Monolithic diamond optics for single photon detection [作者：Siyushev, P; Kaiser, F; Jacques, V; Gerhardt, I; Bischof, S; Fedder, H; Dodson, J; Markham, M; Twitchen, D; Jelezko, F; Wrachtrup, J,期刊：Applied Physics Letters, 页码：241902-241902 , 文章类型： Article，,卷期：2010年97-24] In this work, we experimentally demonstrate a novel and simple approach that uses off-the-shelf optical elements to enhance the collection efficiency from a single emitter. The key component is a solid immersion lens mad... Highly conducting zinc oxide thin films achieved without postgrowth annealing [作者：Singh, B; Khan, ZA; Khan, I; Ghosha, S,期刊：Applied Physics Letters, 页码：241903-241903 , 文章类型： Article，,卷期：2010年97-24] Heavily doped zinc oxide thin films were grown by radio frequency magnetron sputtering. High level of Al doping has been achieved at high growth temperatures (TG), thereby avoiding the need for postgrowth annealing. It i... Large group delay in a microwave metamaterial analog of electromagnetically induced transparency [作者：Zhang, L; Tassin, P; Koschny, T; Kurter, C; Anlage, SM; Soukoulis, CM,期刊：Applied Physics Letters, 页码：241904-241904 , 文章类型： Article，,卷期：2010年97-24] We report on our experimental work concerning a planar metamaterial exhibiting classical electromagnetically induced transparency (EIT). Using a structure with two mirrored split-ring resonators as the dark element and a... Pseudomorphic strain induced strong anisotropic magnetoresistance over a wide temperature range in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films [作者：Wang, LF; Huang, Z; Tan, XL; Chen, PF; Zhi, BW; Li, GM; Wu, WB,期刊：Applied Physics Letters, 页码：242507-242507 , 文章类型： Article，,卷期：2010年97-24] Strong anisotropic magnetoresistance (AMR) was observed in La0.67Ca0.33MnO3 films grown coherently on the orthorhombic NdGaO3(001) substrates. With an increased orthorhombic lattice distortion due to the pseudomorphic st... Nontunnel transport through CoFe2O4 nanometric barriers [作者：Foerster, M; Gutierrez, DF; Rigato, F; Rebled, JM; Peiro, F; Fontcuberta, J,期刊：Applied Physics Letters, 页码：242508-242508 , 文章类型： Article，,卷期：2010年97-24] Electric transport through ultrathin CoFe2O4 (CFO) films of different thicknesses is studied using current sensing atomic force microscopy. Analysis of current distribution maps and I-V characteristics reveals anomalous ... Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films [作者：Lorenz, M; Lajn, A; Frenzel, H; Wenckstern, HV; Grundmann, M; Barquinha, P; Martins, R; Fortunato, E,期刊：Applied Physics Letters, 页码：243506-243506 , 文章类型： Article，,卷期：2010年97-24] We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room ... Stability of top- and bottom-gate amorphous polymer field-effect transistors [作者：Georgakopoulos, S; Sparrowe, D; Meyer, F; Shkunov, M,期刊：Applied Physics Letters, 页码：243507-243507 , 文章类型： Article，,卷期：2010年97-24] Performance and stability between the top- and bottom-gate field-effect transistor configurations are investigated in dual-gate transistor structures consisting of the same insulator and gate materials. The transistors b... Superlatticelike dielectric as a thermal insulator for phase-change random access memory [作者：Loke, D; Shi, LP; Wang, WJ; Zhao, R; Ng, LT; Lim, KG; Yang, HX; Chong, TC; Yeo, YC,期刊：Applied Physics Letters, 页码：243508-243508 , 文章类型： Article，,卷期：2010年97-24] Superlatticelike (SLL) dielectric comprising of Ge2Sb2Te5 and SiO2 was employed to reduce the power and increase the speed of phase-change random access memories (PCRAMs). In this study, we found that PCRAM cells with SL... Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells [作者：Goux, L; Czarnecki, P; Chen, YY; Pantisano, L; Wang, XP; Degraeve, R; Govoreanu, B; Jurczak, M; Wouters, DJ; Altimime, L,期刊：Applied Physics Letters, 页码：243509-243509 , 文章类型： Article，,卷期：2010年97-24] In this letter, we study the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of TiN\HfO2\Pt cells. The oxygen permeability of the Pt electrode di... Anisotropic transport properties in InAs/AlSb heterostructures [作者：Moschetti, G; Zhao, H; Nilsson, PA; Wang, S; Kalabukhov, A; Dambrine, G; Bollaert, S; Desplanque, L; Wallart, X; Grahn, J,期刊：Applied Physics Letters, 页码：243510-243510 , 文章类型： Article，,卷期：2010年97-24] We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a (001) InP substrate. An electrical analysis showed anisotropic sheet resistance R-sh and electron mobility mu(n) in the two... Atomic layer deposition of CuCl nanoparticles [作者：Natarajan, G; Maydannik, PS; Cameron, DC; Akopyan, I; Novikov, BV,期刊：Applied Physics Letters, 页码：241905-241905 , 文章类型： Article，,卷期：2010年97-24] We report the growth of copper (I) chloride by atomic layer deposition. CuCl was deposited as nanoparticle arrays whose size and density were controlled by the process conditions. The nanoparticles were deposited using t... Polarity effect on interfacial reactions at soldered junctions of electrically stressed thermoelectric modules [作者：Liao, CN; Chen, WT; Lee, CH,期刊：Applied Physics Letters, 页码：241906-241906 , 文章类型： Article，,卷期：2010年97-24] Polarity-dependent interfacial reaction at soldered junctions of bismuth telluride based thermoelectric modules is reported. Using infrared thermal imaging system asymmetrical heating at various soldered junctions of the... Graphene growth by molecular beam epitaxy on the carbon-face of SiC [作者：Moreau, E; Godey, S; Ferrer, FJ; Vignaud, D; Wallart, X; Avila, J; Asensio, MC; Bournel, F; Gallet, JJ,期刊：Applied Physics Letters, 页码：241907-241907 , 文章类型： Article，,卷期：2010年97-24] Graphene layers have been grown by molecular beam epitaxy (MBE) on the (000 (1) over bar) C- face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectro... Quantum growth of a metal/insulator system: Lead on sapphire [作者：Hong, H; Gray, A; Xu, RQ; Zhang, LX; Chiang, TC,期刊：Applied Physics Letters, 页码：241908-241908 , 文章类型： Article，,卷期：2010年97-24] We report the observation of quantum growth behavior in a metal-on-insulator system. Using insulating substrates, with their large band gaps, should maximize quantum confinement effects. In a study of Pb film growth and ... dc-switchable and single-nanocrystal-addressable coherent population transfer [作者：Gunceler, D; Bulutay, C,期刊：Applied Physics Letters, 页码：241909-241909 , 文章类型： Article，,卷期：2010年97-24] Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer... Magnetism and clustering in Cr-doped InN [作者：Belabbes, A; Zaoui, A; Ferhat, M,期刊：Applied Physics Letters, 页码：242509-242509 , 文章类型： Article，,卷期：2010年97-24] Density functional theory was applied to study the electronic and magnetic coupling of Cr-doped InN, in which magnetic configurations have been investigated. We found that the calculated ferromagnetic stabilizing energy ...