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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共87条记录   Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs(001) [作者：Zhou, ZY; Tang, WX; Jesson, DE; Tersoff, J,期刊：Applied Physics Letters, 页码：191914-191914 , 文章类型： Article，,卷期：2010年97-19] The time evolution of the Ga droplet size distribution is measured by in situ surface electron microscopy during Langmuir evaporation of GaAs. With a minimum of complexity, we are able to reproduce and explain the major ... Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature [作者：Koblmuller, G; Reurings, F; Tuomisto, F; Speck, JS,期刊：Applied Physics Letters, 页码：191915-191915 , 文章类型： Article，,卷期：2010年97-19] The effect of Ga/N flux ratio on surface morphology, incorporation of point defects and electrical transport properties of GaN films grown by plasma-assisted molecular beam epitaxy in a recently developed high-temperatur... Giant scattering parameter and enhanced thermoelectric properties originating from synergetic scattering of electrons in semiconductors with metal nanoinclusions [作者：Yang, XH; Qin, XY,期刊：Applied Physics Letters, 页码：192101-192101 , 文章类型： Article，,卷期：2010年97-19] The scattering processes of electrons in semiconductors with metal nanoinclusions were theoretically investigated in the framework of relaxation time approximation, in which perturbation theory was used to calculate scat... Ionization energy levels in C-doped InxGa1-xN alloys [作者：Tablero, C,期刊：Applied Physics Letters, 页码：192102-192102 , 文章类型： Article，,卷期：2010年97-19] The InxGa1-xN alloys present levels as a result of the intentional (doped) or unintentional (contamination) introduction of C atoms into the host semiconductor. The III-V nitride semiconductors and their alloys usually c... Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition [作者：Chen, TC; Chang, TC; Hsieh, TY; Tsai, CT; Chen, SC; Lin, CS; Hung, MC; Tu, CH; Chang, JJ; Chen, PL,期刊：Applied Physics Letters, 页码：192103-192103 , 文章类型： Article，,卷期：2010年97-19] This paper investigates the illuminated behaviors of InGaZnO thin film transistors with and without a SiOx passivation. For the passivated device, more interface states were generated during SiOx passivation layer deposi... Spin-dependent processes in amorphous silicon-rich silicon-nitride [作者：Lee, SY; Paik, SY; McCamey, DR; Hu, J; Zhu, F; Madan, A; Boehme, C,期刊：Applied Physics Letters, 页码：192104-192104 , 文章类型： Article，,卷期：2010年97-19] A study of spin-dependent charge carrier transitions in silicon-rich hydrogenated amorphous silicon-nitride (a-SiNx : H) p-i-n devices is presented. Pulsed electrically detected magnetic resonance allows us to determine ... The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors [作者：Kim, DN; Kim, DL; Kim, GH; Kim, SJ; Rim, YS; Jeong, WH; Kim, HJ,期刊：Applied Physics Letters, 页码：192105-192105 , 文章类型： Article，,卷期：2010年97-19] Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of ... Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces [作者：Weber, JR; Janotti, A; Van de Walle, CG,期刊：Applied Physics Letters, 页码：192106-192106 , 文章类型： Article，,卷期：2010年97-19] Using first-principles calculations we investigate the origins of electron accumulation on InAs surfaces. Among the possible intrinsic causes (i.e., involving only In and/or As), In adatoms are the only native defects th... The origin of oxygen in oxide thin films: Role of the substrate [作者：Schneider, CW; Esposito, M; Marozau, I; Conder, K; Doebeli, M; Hu, Y; Mallepell, M; Wokaun, A; Lippert, T,期刊：Applied Physics Letters, 页码：192107-192107 , 文章类型： Article，,卷期：2010年97-19] During the growth of oxide thin films by pulsed laser deposition, a strong oxygen substrate-to-film transfer has been experimentally observed for SrTiO3 and LaAlO3 thin films epitaxially grown on O-18 exchanged SrTiO3 an... Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers [作者：Neuschl, B; Fujan, KJ; Feneberg, M; Tischer, I; Thonke, K; Forghani, K; Klein, M; Scholz, F,期刊：Applied Physics Letters, 页码：192108-192108 , 文章类型： Article，,卷期：2010年97-19] In this study the optical properties of high quality c-plane AlGaN layers grown on c-plane sapphire by metal organic vapor phase epitaxy have been investigated. Submonolayers of SiNx have been deposited in situ to reduce... Efficient data averaging for spin noise spectroscopy in semiconductors [作者：Muller, GM; Romer, M; Hubner, J; Oestreich, M,期刊：Applied Physics Letters, 页码：192109-192109 , 文章类型： Article，,卷期：2010年97-19] Spin noise spectroscopy (SNS) is the perfect tool to investigate electron spin dynamics in semiconductors at thermal equilibrium. We simulate SNS measurements which utilize real-time fast Fourier transformation instead o... Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry [作者：Tracy, LA; Nordberg, EP; Young, RW; Pinilla, CB; Stalford, HL; Ten Eyck, GA; Eng, K; Childs, KD; Wendt, JR; Grubbs, RK; Stevens, J; Lilly, MP; Eriksson, MA; Carroll, MS,期刊：Applied Physics Letters, 页码：192110-192110 , 文章类型： Article，,卷期：2010年97-19] We present transport measurements of a tunable silicon metal-oxide semiconductor double quantum dot device with lateral geometry. The experimentally extracted gate-to-dot capacitances show that the device is largely symm... GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP [作者：El Kazzi, S; Desplanque, L; Coinon, C; Wang, Y; Ruterana, P; Wallart, X,期刊：Applied Physics Letters, 页码：192111-192111 , 文章类型： Article，,卷期：2010年97-19] We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surf... Optical alignment of the exciton in ZnO nanoparticles [作者：Chassaing, PM; Balocchi, A; Amand, T; Saint-Macary, L; Kahn, ML; Chaudret, B; Marie, X,期刊：Applied Physics Letters, 页码：192112-192112 , 文章类型： Article，,卷期：2010年97-19] The exciton spin dynamics of zinc oxide nanoparticles (NPs) of sizes ranging from 2.3 to 6.6 nm has been studied by time-resolved photoluminescence. Following a quasiresonant linearly polarized excitation, the exciton ph... High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy [作者：Maeda, Y; Hamaya, K; Yamada, S; Ando, Y; Yamane, K; Miyao, M,期刊：Applied Physics Letters, 页码：192501-192501 , 文章类型： Article，,卷期：2010年97-19] We demonstrate atomically controlled heterojunctions consisting of ferromagnetic CoFe alloys and silicon (Si) using low-temperature molecular beam epitaxy with a good atomic matching at the (111) plane. The saturation ma... Three-dimensional magnetization profile and multiaxes exchange bias in Co antidot arrays [作者：Fettar, F; Cagnon, L; Rougemaille, N,期刊：Applied Physics Letters, 页码：192502-192502 , 文章类型： Article，,卷期：2010年97-19] Magnetic properties of Cu/Co/Cu trilayers deposited on nanoporous alumina membranes are investigated using a superconducting quantum interference device. Hysteresis loops of the resulting Co antidot arrays show two-step ...