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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共59条记录   Single-step, catalyst-free plasma-assisted synthesis and growth mechanism of single-crystalline aluminum nitride nanorods [作者：Huang, SY; Cheng, QJ; Xu, S; Ostrikov, K,期刊：Applied Physics Letters, 页码：213103-213103 , 文章类型： Article，,卷期：2010年97-21] Synthesis of one-dimensional AlN nanostructures commonly requires high process temperatures (> 900 degrees C), metal catalyst, and hazardous gas/powder precursors. We report on a simple, single-step, catalyst-free, plasm... Design considerations and propagation characteristics of channel Bragg-plasmon-coupled-waveguides [作者：Srivastava, T; Das, R; Jha, R,期刊：Applied Physics Letters, 页码：213104-213104 , 文章类型： Article，,卷期：2010年97-21] We present a detailed design principle and propagation characteristics of channel Bragg-plasmon-coupled-waveguide. We have found that there is a significant change in the slope of the phase-velocity dispersion curve lead... Quantification of antagonistic optomechanical forces in an interferometric detection system for dynamic force microscopy [作者：Troger, L; Reichling, M,期刊：Applied Physics Letters, 页码：213105-213105 , 文章类型： Article，,卷期：2010年97-21] In fiber-optic interferometer systems detecting oscillatory cantilever motion, the intensity distribution of the light field in the interferometric cavity generates an optomechanical coupling determining the effective pr... Tuning of a graphene-electrode work function to enhance the efficiency of organic bulk heterojunction photovoltaic cells with an inverted structure [作者：Jo, G; Na, SI; Oh, SH; Lee, S; Kim, TS; Wang, G; Choe, M; Park, W; Yoon, J; Kim, DY; Kahng, YH; Lee, T,期刊：Applied Physics Letters, 页码：213301-213301 , 文章类型： Article，,卷期：2010年97-21] We demonstrate the fabrication of inverted-structure organic solar cells (OSCs) with graphene cathodes. The graphene film used in this work was work-function-engineered with an interfacial dipole layer to reduce the work... Silicon waveguides and ring resonators at 5.5 mu m [作者：Spott, A; Liu, Y; Baehr-Jones, T; Ilic, R; Hochberg, M,期刊：Applied Physics Letters, 页码：213501-213501 , 文章类型： Article，,卷期：2010年97-21] We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 mu m. Structures were fabricated using electron-beam lithography on the silicon-on-sapp... Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells [作者：Cuony, P; Marending, M; Alexander, DTL; Boccard, M; Bugnon, G; Despeisse, M; Ballif, C,期刊：Applied Physics Letters, 页码：213502-213502 , 文章类型： Article，,卷期：2010年97-21] Lower absorption, lower refractive index, and tunable resistance are three advantages of amorphous silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to microcrystalline silicon (mu c-Si), when us... Gate stack insulator breakdown when the interface layer thickness is scaled toward zero [作者：Sune, J; Tous, S; Miranda, E,期刊：Applied Physics Letters, 页码：213503-213503 , 文章类型： Article，,卷期：2010年97-21] To fully profit from the advantages of high-K materials in metal-oxide-semiconductor gate insulator stacks, the reduction in the silicon oxide interfacial layer thickness is being pursued. In the framework of the percola... Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention [作者：Tsai, CY; Lee, TH; Cheng, CH; Chin, A; Wang, H,期刊：Applied Physics Letters, 页码：213504-213504 , 文章类型： Article，,卷期：2010年97-21] We have fabricated the TaN-[SiO2-LaAlO3]-ZrON-[LaAlO3-SiO2]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si3N4-thickness. This device shows large 4.9 V initial memory window, and good retention of... Liquid crystal display modes in a nontilted bent-core biaxial smectic liquid crystal [作者：Nagaraj, M; Panarin, YP; Vij, JK; Keith, C; Tschierske, C,期刊：Applied Physics Letters, 页码：213505-213505 , 文章类型： Article，,卷期：2010年97-21] Liquid crystal display (LCD) modes associated with the rotation of the secondary director in nontilted, biaxial smectic phase of an achiral bent-core compound are demonstrated. For LCDs, we find that at least four displa... Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric [作者：Shahrjerdi, D; Nah, J; Hekmatshoar, B; Akyol, T; Ramon, M; Tutuc, E; Banerjee, SK,期刊：Applied Physics Letters, 页码：213506-213506 , 文章类型： Article，,卷期：2010年97-21] We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge d... Molecular diffusivity measurement through an alumina membrane using time-resolved fluorescence imaging [作者：Kennard, R; DeSisto, WJ; Mason, MD,期刊：Applied Physics Letters, 页码：213701-213701 , 文章类型： Article，,卷期：2010年97-21] We present a simple fluorescence imaging method for measuring the time-resolved concentration of a fluorescent molecule diffusing through an anodic alumina membrane with a pore diameter of 20 nm. From the concentration b...