- A low-noise, single-photon avalanche diode in standard 0.13 mu m complementary metal-oxide-semiconductor process
[作者：Field, RM; Lary, J; Cohn, J; Paninski, L; Shepard, KL,期刊：Applied Physics Letters, 页码：211111-211111 , 文章类型： Article，,卷期：2010年97-21]
- We present the design and characterization of a single-photon avalanche diode (SPAD) fabricated with a standard 0.13 mu m complementary metal-oxide-semiconductor process. We have developed a figure of merit for SPADs whe...
- Four-dimensional imaging of the initial stage of fast evolving plasmas
[作者：Zhu, PF; Zhang, ZC; Chen, L; Zheng, J; Li, RZ; Wang, WM; Li, JJ; Wang, XA; Cao, JM; Qian, D; Sheng, ZM; Zhang, J,期刊：Applied Physics Letters, 页码：211501-211501 , 文章类型： Article，,卷期：2010年97-21]
- Using an ultrafast electron probe capable of four-dimensional diagnosis, the initial stage of fast evolving plasmas produced by a 10(14) W/cm(2) laser irradiation of a metal target was investigated in real time with pico...
- Deep level related photoluminescence in ZnMgO
[作者：Trunk, M; Venkatachalapathy, V; Galeckas, A; Kuznetsov, AY,期刊：Applied Physics Letters, 页码：211901-211901 , 文章类型： Article，,卷期：2010年97-21]
- Optically active deep levels were investigated in ZnMgO layers using temperature dependent photoluminescence. The samples, grown on c-plane sapphire by metal-organic vapor phase epitaxy, exhibited Mg contents ranging fro...
- Dynamical Franz-Keldysh effect in GaAs/AlGaAs multiple quantum wells induced by single-cycle terahertz pulses
[作者：Shinokita, K; Hirori, H; Nagai, M; Satoh, N; Kadoya, Y; Tanaka, K,期刊：Applied Physics Letters, 页码：211902-211902 , 文章类型： Article，,卷期：2010年97-21]
- We studied absorption spectra near the band gap of GaAs/AlGaAs multiple quantum wells subjected to strong single-cycle terahertz pulses. With an increasing terahertz electric field, the heavy-hole 1s exciton energy near ...
- The electronic structure of beta-Ga2O3
[作者：Mohamed, M; Janowitz, C; Unger, I; Manzke, R; Galazka, Z; Uecker, R; Fornari, R; Weber, JR; Varley, JB; de Walle, CGV,期刊：Applied Physics Letters, 页码：211903-211903 , 文章类型： Article，,卷期：2010年97-21]
- beta-Ga2O3 has the widest energy gap of the transparent conducting oxides. The interest in its electronic properties has recently increased because of its applications in various optoelectronic devices, semiconductor las...
- Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study
[作者：Zhu, JJ; Li, WW; Li, YW; Shen, YD; Hu, ZG; Chu, JH,期刊：Applied Physics Letters, 页码：211904-211904 , 文章类型： Article，,卷期：2010年97-21]
- The reflectance spectra of LaNiO3 film on silicon have been investigated in the wavelength range of 190-2650 nm (0.47-6.5 eV) under different external direct-current voltage. The Drude-Lorentz dispersion model is used to...
- VO2 multidomain heteroepitaxial growth and terahertz transmission modulation
[作者：Chen, CH; Zhu, YH; Zhao, Y; Lee, JH; Wang, HY; Bernussi, A; Holtz, M; Fan, ZY,期刊：Applied Physics Letters, 页码：211905-211905 , 文章类型： Article，,卷期：2010年97-21]
- We report the epitaxial relationship of VO2 thin-films on c-plane sapphire and their terahertz transmission modulation with temperature. The films exhibit a triple-domain structure caused by the lattice mismatch between ...
- Thermal stability of the OH-Li complex in hydrothermally grown single crystalline ZnO
[作者：Johansen, KM; Haug, H; Lund, E; Monakhov, EV; Svensson, BG,期刊：Applied Physics Letters, 页码：211907-211907 , 文章类型： Article，,卷期：2010年97-21]
- The thermal stability of the prominent 3577 cm(-1) infrared absorption band in ZnO, assigned to an O-H stretch mode adjacent to a Li atom on Zn site (Li-Zn), is studied. Employing slow sample cooling after annealing, the...
- An ab initio study of the elastic behavior of single crystal group (IV) diborides at elevated temperatures
[作者：Gonzales, M; Chessa, J; Ramana, CV,期刊：Applied Physics Letters, 页码：211908-211908 , 文章类型： Article，,卷期：2010年97-21]
- We report on an ab initio molecular dynamics study of the lattice parameters, thermal expansion coefficients, and elastic constants of ZrB2, TiB2, and HfB2 ceramics at ultrahigh temperatures (up to 2200 K). Equilibrium l...
- Abnormal humidity-dependent electrical properties of amorphous carbon/silicon heterojunctions
[作者：Gao, XL; Zhang, XZ; Wan, CH; Zhang, X; Wu, LH; Tan, XY,期刊：Applied Physics Letters, 页码：212101-212101 , 文章类型： Article，,卷期：2010年97-21]
- Amorphous carbon (a-C) film/n-Si heterojunctions have been fabricated by pulse laser deposition, and their current-voltage characteristics have been investigated. The results show that the atmosphere relative humidity (R...
- Electrical bistability in hybrid ZnO nanorod/polymethylmethacrylate heterostructures
[作者：Tseng, ZL; Kao, PC; Shih, MF; Huang, HH; Wang, JY; Chu, SY,期刊：Applied Physics Letters, 页码：212103-212103 , 文章类型： Article，,卷期：2010年97-21]
- A hybrid resistance switching device consisting of ZnO nanorods embedded in an insulating polymethylmethacrylate (PMMA) heterostructure sandwiched between a transparent conductive film and an Al electrode is proposed. Th...
- Triple quantum dot device designed for three spin qubits
[作者：Takakura, T; Pioro-Ladriere, M; Obata, T; Shin, YS; Brunner, R; Yoshida, K; Taniyama, T; Tarucha, S,期刊：Applied Physics Letters, 页码：212104-212104 , 文章类型： Article，,卷期：2010年97-21]
- Electron spin confined in quantum dots is a promising candidate for experimental qubits. Aiming at realizing a three spin-qubit system, we designed split micromagnets suitable for the lateral triple quantum dots. From nu...
- Carrier doping into boron nanobelts by neutron transmutation
[作者：Kirihara, K; Shimizu, Y; Yamada, Y; Esaka, F; Sasaki, T; Koshizaki, N; Yamamoto, H; Shamoto, S; Kimura, K,期刊：Applied Physics Letters, 页码：212105-212105 , 文章类型： Article，,卷期：2010年97-21]
- We report the effects of a neutron-capture reaction of isotope B-10 on the structure and electrical transport of B-10-enriched single-crystalline boron nanobelts. Partial amorphization, particularly at the surface of the...
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