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  • Epitaxial EuO thin films on GaAs
    [作者:Swartz, AG; Ciraldo, J; Wong, JJI; Li, Y; Han, W; Lin, T; Mack, S; Shi, J; Awschalom, DD; Kawakami, RK,期刊:Applied Physics Letters, 页码:112509-112509 , 文章类型: Article,,卷期:2010年97-11]
  • We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch,...
  • Increased electromechanical coupling in w-ScxAl1-xN
    [作者:Wingqvist, G; Tasnadi, F; Zukauskaite, A; Birch, J; Arwin, H; Hultman, L,期刊:Applied Physics Letters, 页码:112902-112902 , 文章类型: Article,,卷期:2010年97-11]
  • AlN is challenged as the material choice in important thin film electroacoustic devices for modern wireless communication applications. We present the promise of superior electromechanical coupling (k(t)(2)), in w-ScxAl1...