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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共98条记录   In situ observation of rapid reactions in nanoscale Ni-Al multilayer foils using synchrotron radiation [作者：Fadenberger, K; Gunduz, IE; Tsotsos, C; Kokonou, M; Gravani, S; Brandstetter, S; Bergamaschi, A; Schmitt, B; Mayrhofer, PH; Doumanidis, CC; Rebholz, C,期刊：Applied Physics Letters, 页码：144101-144101 , 文章类型： Article，,卷期：2010年97-14] The observation of rapid reactions in nanoscale multilayers present challenges that require sophisticated analysis methods. We present high-resolution in situ x-ray diffraction analysis of reactions in nanoscale foils of... Experimental verification of full reconstruction of the near-field with a metamaterial lens [作者：Morgado, TA; Marcos, JS; Silveirinha, MG; Maslovski, SI,期刊：Applied Physics Letters, 页码：144102-144102 , 文章类型： Article，,卷期：2010年97-14] It is experimentally verified that a lens formed by tilted metallic wires enables the full reconstruction of the near-field, both in amplitude and phase. It is shown that since the electric field is measured at a signifi... Magnetic confinement of Brownian rotation to a single axis and application to Janus and cluster microparticles [作者：McNaughton, BH; Shlomi, M; Kinnunen, P; Cionca, C; Pei, SN; Clarke, R; Argyrakis, P; Kopelman, R,期刊：Applied Physics Letters, 页码：144103-144103 , 文章类型： Article，,卷期：2010年97-14] We present an experimental, one-dimensional, Brownian rotation system in which the free rotation is confined to a single axis. Control of the rotational diffusion of a single microparticle, or particle aggregate, around ... Comment on "Surface stress induced structural transformations and pseudoelastic effects in palladium nanowires" [Appl. Phys. Lett. 93, 093108, (2008)] [作者：Sutrakar, VK; Mahapatra, DR,期刊：Applied Physics Letters, 页码：146101-146101 , 文章类型： Editorial Material，,卷期：2010年97-14] Photoluminescence induced by thermal annealing in SrTiO3 thin film (vol 95, 241906, 2009) [作者：Rho, J; Jang, S; Ko, YD; Kang, S; Kim, DW; Chung, JS; Kim, M; Han, M; Choi, E,期刊：Applied Physics Letters, 页码：149901-149901 , 文章类型： Correction，,卷期：2010年97-14] Semipolar single component GaN on planar high index Si(11h) substrates [作者：Ravash, R; Blaesing, J; Dadgar, A; Krost, A,期刊：Applied Physics Letters, 页码：142102-142102 , 文章类型： Article，,卷期：2010年97-14] We present metal organic vapor phase epitaxy growth of polarization reduced, single component GaN on nonpatterned Si (112), Si(113), Si(114), Si(115), and Si(116) substrates. We find that the inclination angle of GaN c-a... Optical investigation of bulk electron mobility in 3C-SiC films on Si substrates [作者：Piluso, N; Severino, A; Camarda, M; Canino, A; La Magna, A; La Via, F,期刊：Applied Physics Letters, 页码：142103-142103 , 文章类型： Article，,卷期：2010年97-14] The dependence between the carrier concentration and electrical mobility has been studied by micro-Raman spectroscopy in n-doped 3C-SiC films grown on (111) and (100) Silicon oriented substrates. Bulk mobility varies bet... Theory-guided growth of aluminum antimonide single crystals with optimal properties for radiation detection [作者：Erhart, P; Aberg, D; Sturm, BW; Wu, KJ; Lordi, V,期刊：Applied Physics Letters, 页码：142104-142104 , 文章类型： Article，,卷期：2010年97-14] First-principles calculations are used to study the thermodynamic and electronic properties of a large set of intrinsic and extrinsic defects in AlSb. The results are employed in conjunction with experimental impurity da... First principles study of electronic transport through a Cu(111) graphene junction [作者：Maassen, J; Ji, W; Guo, H,期刊：Applied Physics Letters, 页码：142105-142105 , 文章类型： Article，,卷期：2010年97-14] We report first principles investigations of the nonequilibrium transport properties of a Cu(111)vertical bar graphene interface. The Cu(111) electrode is found to induce a transmission minimum (TM) located -0.68 eV belo... Oxygen vacancies and donor impurities in beta-Ga2O3 [作者：Varley, JB; Weber, JR; Janotti, A; Van de Walle, CG,期刊：Applied Physics Letters, 页码：142106-142106 , 文章类型： Article，,卷期：2010年97-14] Using hybrid functionals we have investigated the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide beta-Ga2O3. We find that oxygen vacancies are... The disordering effect of Ti observed in the microstructure and electrical properties of W0.95Ti0.05O3 thin films [作者：Kalidindi, NR; Bharathi, KK; Ramana, CV,期刊：Applied Physics Letters, 页码：142107-142107 , 文章类型： Article，,卷期：2010年97-14] We report on the inhibition of WO3 crystallization by the addition of Ti observed in sputter-deposited W0.95Ti0.05O3 films. The effect of growth-temperature on the crystallization indicates that the W0.95Ti0.05O3 films g... Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors [作者：Ferrus, T; George, R; Barnes, CHW; Pepper, M,期刊：Applied Physics Letters, 页码：142108-142108 , 文章类型： Article，,卷期：2010年97-14] We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of ... Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition [作者：Keller, S; Dora, Y; Wu, F; Chen, X; Chowdury, S; DenBaars, SP; Speck, JS; Mishra, UK,期刊：Applied Physics Letters, 页码：142109-142109 , 文章类型： Article，,卷期：2010年97-14] Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientat... Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films [作者：Asanuma, S; Xiang, PH; Yamada, H; Sato, H; Inoue, IH; Akoh, H; Sawa, A; Ueno, K; Shimotani, H; Yuan, H; Kawasaki, M; Iwasa, Y,期刊：Applied Physics Letters, 页码：142110-142110 , 文章类型： Article，,卷期：2010年97-14] We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO3 inter... A boron-containing molecule as an efficient electron-transporting material with low-power consumption [作者：Shizu, K; Sato, T; Tanaka, K; Kaji, H,期刊：Applied Physics Letters, 页码：142111-142111 , 文章类型： Article，,卷期：2010年97-14] We theoretically propose a boron-containing molecule, hexaboracyclophane (HBCP), as an electron-transporting (ET) material with low-power loss. We calculate the vibronic coupling of HBCP, comparing them with those of oth... Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1-xN/GaN heterostructures [作者：Polyakov, VM; Cimalla, V; Lebedev, V; Kohler, K; Muller, S; Waltereit, P; Ambacher, O,期刊：Applied Physics Letters, 页码：142112-142112 , 文章类型： Article，,卷期：2010年97-14] The influence of the Al content on the mobility of the two-dimensional electron gas (2DEG) in GaN/AlxGa1-xN/GaN heterostructures is studied by employing the ensemble Monte Carlo method. Using two interface polarization c...