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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共103条记录   Photocarrier recombination dynamics in highly excited SrTiO3 studied by transient absorption and photoluminescence spectroscopy [作者：Yamada, Y; Yasuda, H; Tayagaki, T; Kanemitsu, Y,期刊：Applied Physics Letters, 页码：121112-121112 , 文章类型： Article，,卷期：2009年95-12] We studied photocarrier recombination processes in highly excited SrTiO3 crystals using pump-probe transient absorption (TA) and photoluminescence (PL) spectroscopy at room temperature. TA signals of nondoped SrTiO3 crys... Branched carbon treelike structures grown in direct current plasmas [作者：Ding, F; Zhu, XD; Zhan, RJ; Ni, TL; Ke, B; Zhou, HY; Chen, MD; Wen, XH,期刊：Applied Physics Letters, 页码：121501-121501 , 文章类型： Article，,卷期：2009年95-12] The growth of centimeter-scale treelike carbon structures in a hydrocarbon direct current (dc) plasma without the help of catalyst particles is reported. Starting from the edge of the anode, the carbon trees have a tende... High average power second harmonic generation in air [作者：Beresna, M; Kazansky, PG; Svirko, Y; Barkauskas, M; Danielius, R,期刊：Applied Physics Letters, 页码：121502-121502 , 文章类型： Article，,卷期：2009年95-12] We demonstrate second harmonic vortex generation in atmospheric pressure air using tightly focused femtosecond laser beam. The circularly polarized ring-shaped beam of the second harmonic is generated in the air by funda... Selecting a single orientation for millimeter sized graphene sheets [作者：van Gastel, R; N'Diaye, AT; Wall, D; Coraux, J; Busse, C; Buckanie, NM; zu Heringdorf, FJM; von Hoegen, MH; Michely, T; Poelsema, B,期刊：Applied Physics Letters, 页码：121901-121901 , 文章类型： Article，,卷期：2009年95-12] We have used low energy electron microscopy and photo emission electron microscopy to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature al... Stress influence on band-edge luminescence properties of 4H-AlN [作者：Cheng, YC; Wu, XL; Li, SH; Chu, PK,期刊：Applied Physics Letters, 页码：121902-121902 , 文章类型： Article，,卷期：2009年95-12] The band-edge luminescence properties of 4H-AlN under biaxial and uniaxial stress are studied using the first-principle method. In equilibrium, excitons B and C have energies 92 and 14 meV lower than exciton A, respectiv... Time-resolved photoluminescence analysis of two-peak emission behavior in Sr2Si5N8:Eu2+ [作者：Sohn, KS; Lee, S; Xie, RJ; Hirosaki, N,期刊：Applied Physics Letters, 页码：121903-121903 , 文章类型： Article，,卷期：2009年95-12] Sr2Si5N8:Eu2+, one of the most recently developed phosphors for use in white light emitting diodes, exhibits a two-peak emission. Namely, the emission band of Sr2Si5N8:Eu2+ is deconvoluted into two Gaussian peaks irrespe... Lightweight sodium alanate thin films grown by reactive sputtering [作者：Filippi, M; Rector, JH; Gremaud, R; van Setten, MJ; Dam, B,期刊：Applied Physics Letters, 页码：121904-121904 , 文章类型： Article，,卷期：2009年95-12] We report the preparation of sodium alanate, a promising hydrogen storage material, in a thin film form using cosputtering in a reactive atmosphere of atomic hydrogen. We study the phase formation and distribution, and t... The strong influence of heat losses on the accurate measurement of thermal diffusivity using lock-in thermography [作者：Salazar, A; Mendioroz, A; Fuente, R,期刊：Applied Physics Letters, 页码：121905-121905 , 文章类型： Article，,卷期：2009年95-12] In modulated photothermal experiments the lateral thermal diffusivity can be obtained from the slope of the linear relation between the phase of the surface temperature and the distance to the heating spot. However, this... Study of the free energy of the La1-xCaxMnO3 manganites based on the temperature dependence of the crystal cell volume [作者：Tang, GD; Liu, SP; Zhao, X; Zhang, YG; Ji, DH; Li, YF; Qi, WH; Chen, W; Hou, DL,期刊：Applied Physics Letters, 页码：121906-121906 , 文章类型： Article，,卷期：2009年95-12] A study of the free energy of the perovskite manganites was performed by fitting experimental results for the temperature dependence of the crystal cell volume using a detailed semiclassical model of the free energy. The... In-depth resolved Raman scattering analysis of secondary phases in Cu-poor CuInSe2 based thin films [作者：Fontane, X; Izquierdo-Roca, V; Calvo-Barrio, L; Alvarez-Garcia, J; Perez-Rodriguez, A; Morante, JR; Witte, W,期刊：Applied Physics Letters, 页码：121907-121907 , 文章类型： Article，,卷期：2009年95-12] Raman scattering analysis of Cu-poor CuInSe2 layers shows the coexistence of the ordered vacancy compound (OVC), CuAu-CuInSe2 and chalcopyrite (CH) CuInSe2 phases as function of the Cu/In content ratio x. In-depth resolv... Orientation control and self-assembled nanopyramid structure of LaFeO3 films epitaxially grown on SrTiO3(001) substrates [作者：Bi, L; Kim, HS; Dionne, GF; Ross, CA; Paik, H; Park, YC,期刊：Applied Physics Letters, 页码：121908-121908 , 文章类型： Article，,卷期：2009年95-12] Epitaxial films of LaFeO3 (LFO) were grown on SrTiO3 (001) (STO) substrates using pulsed laser deposition. Two epitaxial orientations were observed: alpha where LFO(110)parallel to STO(100) and beta where LFO(001)paralle... A superlens for the deep ultraviolet [作者：Schilling, A; Schilling, J; Reinhardt, C; Chichkov, B,期刊：Applied Physics Letters, 页码：121909-121909 , 文章类型： Article，,卷期：2009年95-12] A superlens based on a single aluminum layer operating at deep ultraviolet (UV) wavelengths is investigated both, theoretically and experimentally. Using a wavelength of 157 nm double slits with a center-to-center separa... Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy [作者：Ma, B; Hu, WG; Miyake, H; Hiramatsu, K,期刊：Applied Physics Letters, 页码：121910-121910 , 文章类型： Article，,卷期：2009年95-12] Effects of the nitridation of the r-plane sapphire were investigated on the growth of a-plane GaN. Surface morphology and crystal quality were very sensitive to the nitridated time. A high quality a-plane GaN with a pit ... Structural relaxation and crystallization of NiTi thin film metallic glasses [作者：Huang, X; Ramirez, AG,期刊：Applied Physics Letters, 页码：121911-121911 , 文章类型： Article，,卷期：2009年95-12] This letter demonstrates the effects of structural relaxation on the crystallization and phase transformation behavior of NiTi thin films. Heat treatments below the glass transformation temperature produce films with a g... Theoretical design of GaN/ferroelectric heterostructure: Toward a strained semiconductor on ferroelectrics [作者：Zhang, JH; Yang, CR; Wu, S; Liu, Y; Chen, HW; Zhang, WL; Li, YR,期刊：Applied Physics Letters, 页码：122101-122101 , 文章类型： Article，,卷期：2009年95-12] Ferroelectric/semiconductor heterostructures are of great interest for future electronic devices. This letter examined the material parameters and carrier distributions of an AlGaN(0001)/GaN(0001)/BaTiO3(111) double hete... Hall effect mobility of epitaxial graphene grown on silicon carbide [作者：Tedesco, JL; VanMil, BL; Myers-Ward, RL; McCrate, JM; Kitt, SA; Campbell, PM; Jernigan, GG; Culbertson, JC; Eddy, CR; Gaskill, DK,期刊：Applied Physics Letters, 页码：122102-122102 , 文章类型： Article，,卷期：2009年95-12] Epitaxial graphene (EG) films were grown in vacuo by silicon sublimation from the (0001) and (000 (1) over bar) faces of 4H-SiC and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at...