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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共56条记录   High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure [作者：Zhang, S; Li, MC; Feng, ZH; Liu, B; Yin, JY; Zhao, LC,期刊：Applied Physics Letters, 页码：212101-212101 , 文章类型： Article，,卷期：2009年95-21] High electron mobility and low sheet resistance were achieved in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel (DC) heterostructure. Two-dimensional electron gas (2DEG) of the DC heterostructure was divided into t... Investigation on GaAs surface treated with dimethylaluminumhydride [作者：Lu, HL; Wang, XL; Sugiyama, M; Shimogaki, Y,期刊：Applied Physics Letters, 页码：212102-212102 , 文章类型： Article，,卷期：2009年95-21] The reduction and removal of surface native oxides from as-degreased and HCl-treated GaAs substrates using dimethylaluminumhydride (DMAH) have been studied by x-ray photoelectron spectroscopy. It is revealed that higher ... Type I/type II band alignment transition in strained PbSe/PbEuSeTe multiquantum wells [作者：Simma, M; Fromherz, T; Bauer, G; Springholz, G,期刊：Applied Physics Letters, 页码：212103-212103 , 文章类型： Article，,卷期：2009年95-21] Investigation of the optical transitions in tensily strained PbSe/PbEuSeTe multiquantum wells by differential transmission spectroscopy reveals a type I/type II band alignment transition due to strain-induced lowering of... Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures [作者：Donetsky, D; Svensson, SP; Vorobjev, LE; Belenky, G,期刊：Applied Physics Letters, 页码：212104-212104 , 文章类型： Article，,卷期：2009年95-21] Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime i... Interfacial layer dependence on device property of high-kappa TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness [作者：Chen, WB; Chin, A,期刊：Applied Physics Letters, 页码：212105-212105 , 文章类型： Article，,卷期：2009年95-21] We have investigated the device property dependence of high dielectric-constant (high-kappa) TiLaO epitaxial-Ge/Si n-type metal-oxide-semiconductor (n-MOS) capacitors on different GeO2 and SiO2 interfacial layers. Large ... Thermoelectric properties and anisotropic electronic band structure on the In4Se3-x compounds [作者：Rhyee, JS; Cho, E; Lee, KH; Lee, SM; Kim, SI; Kim, HS; Kwon, YS; Kim, SJ,期刊：Applied Physics Letters, 页码：212106-212106 , 文章类型： Article，,卷期：2009年95-21] We report the high thermoelectric figure-of-merit (ZT) on the Se-deficient polycrystalline compounds of In4Se3-x (0.02 < x < 0.5) and the anisotropic electronic band structure. The Se-deficiency (x) has the effect of dec... Probing magnetic singularities during magnetization process in FePd films [作者：Masseboeuf, A; Jourdan, T; Lancon, F; Bayle-Guillemaud, P; Marty, A,期刊：Applied Physics Letters, 页码：212501-212501 , 文章类型： Article，,卷期：2009年95-21] We report the use of Lorentz microscopy to observe the domain wall structure during the magnetization process in iron-palladium thin foils. We have focused on the magnetic structure of domain walls of bubble-shaped magne... Effects of combined current injection and laser irradiation on Permalloy microwire switching [作者：Franken, JH; Mohrke, P; Klaui, M; Rhensius, J; Heyderman, LJ; Thiele, JU; Swagten, HJM; Gibson, UJ; Rudiger, U,期刊：Applied Physics Letters, 页码：212502-212502 , 文章类型： Article，,卷期：2009年95-21] Combined field- and current-induced domain wall (DW) motion in Permalloy microwires is studied using fast magneto-optical Kerr-microscopy. On increasing the current density, we find a decrease of Kerr signal contrast, co... Electric field control of magnetoresistance in a lateral InAs quantum well spin valve [作者：Kum, H; Basu, D; Bhattacharya, P; Guo, W,期刊：Applied Physics Letters, 页码：212503-212503 , 文章类型： Article，,卷期：2009年95-21] The control of magnetoresistance of a lateral spin valve with bias applied to a gate placed outside the channel region is demonstrated. The spin valve channel consists of an InAs/In0.53Ga0.47As/In0.52Al0.48As two-dimensi... Ferromagnetic to weak-magnetic transition accompanied by bcc to fcc transformation in Fe-Mn-Al alloy [作者：Ando, K; Omori, T; Ohnuma, I; Kainuma, R; Ishida, K,期刊：Applied Physics Letters, 页码：212504-212504 , 文章类型： Article，,卷期：2009年95-21] Magnetic properties and phase change in Fe-36 at. %Mn-15 at. %Al ternary alloy were investigated. Direct evidence of a ferromagnetic to weak-magnetic transition accompanied by martensitic transformation from the bcc-alph... Weak-link behavior of grain boundaries in superconducting Ba(Fe1-xCox)(2)As-2 bicrystals [作者：Lee, S; Jiang, J; Weiss, JD; Folkman, CM; Bark, CW; Tarantini, C; Xu, A; Abraimov, D; Polyanskii, A; Nelson, CT; Zhang, Y; Baek, SH; Jang, HW; Yamamoto, A; Kametani, F; Pan, XQ; Hellstrom, EE; Gurevich, A; Eom, CB; Larbalestier, DC,期刊：Applied Physics Letters, 页码：212505-212505 , 文章类型： Article，,卷期：2009年95-21] We show that despite the low anisotropy, strong vortex pinning, and high irreversibility field H-irr close to the upper critical field H-c2 of Ba(Fe1-xCox)(2)As-2, the critical current density J(gb) across [001] tilt gra... Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer [作者：Xiao, B; Liu, HR; Avrutin, V; Leach, JH; Rowe, E; Liu, HY; Ozgur, U; Morkoc, H; Chang, W; Alldredge, LMB; Kirchoefer, SW; Pond, JM,期刊：Applied Physics Letters, 页码：212901-212901 , 文章类型： Article，,卷期：2009年95-21] High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire (1120) by rf magnetron sputtering using a double bridge layer consisting of (0001)-oriented ZnO (50 nm) and (001)-oriented M... Characterization of the "clean-up" of the oxidized Ge(100) surface by atomic layer deposition [作者：Milojevic, M; Contreras-Guerrero, R; Lopez-Lopez, M; Kim, J; Wallace, RM,期刊：Applied Physics Letters, 页码：212902-212902 , 文章类型： Article，,卷期：2009年95-21] While the "clean-up" effect on III-V substrates has recently been well documented interfacial reactions during atomic layer deposition (ALD) on Ge substrates are not fully explored. The "clean-up" of Ge oxides is studied... Interaction of La2O3 capping layers with HfO2 gate dielectrics [作者：Copel, M; Guha, S; Bojarczuk, N; Cartier, E; Narayanan, V; Paruchuri, V,期刊：Applied Physics Letters, 页码：212903-212903 , 文章类型： Article，,卷期：2009年95-21] We report the effect of La2O3 capping layers on HfO2/SiO2/Si dielectrics, proposed for use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy ion scattering shows that an initial ... Vertically aligned ZnO nanostructures grown on graphene layers [作者：Kim, YJ; Lee, JH; Yi, GC,期刊：Applied Physics Letters, 页码：213101-213101 , 文章类型： Article，,卷期：2009年95-21] We report the vertical growth of ZnO nanostructures on graphene layers and their photoluminescence (PL) characteristics. ZnO nanostructures were grown vertically on the graphene layers using catalyst-free metal-organic v... Emission properties of Ag/dielectric/Ag plasmonic thermal emitter with different lattice type, hole shape, and dielectric material [作者：Chang, YT; Wu, YT; Lee, JH; Chen, HH; Hsueh, CY; Huang, HF; Jiang, YW; Chang, PE; Lee, SC,期刊：Applied Physics Letters, 页码：213102-213102 , 文章类型： Article，,卷期：2009年95-21] The emission spectra of the trilayer Ag/dielectric/Ag plasmonic thermal emitter (PTE) with different lattice type, hole shape, and dielectric material were investigated. It is found that the position and number of therma...