- Magnetic quasidomain structures in Ru-doped La0.6Sr0.4MnO3 thin films - art. no. 252503
[作者:Konoto, M; Yamada, H; Koike, K; Akoh, H; Kawasaki, M; Tokura, Y,期刊:Applied Physics Letters, 页码:52503-52503 , 文章类型: Article,,卷期:2008年93-25]
- We investigated magnetic composite domain structures in Ru-doped La0.6Sr0.4MnO3 thin films epitaxially grown on SrTiO3 (001) substrates with use of a high-precision spin-imaging technique. Quasidomains composed of numero...
- Tuning magnetic frustration of nanomagnets in triangular-lattice geometry - art. no. 252504
[作者:Ke, XL; Li, J; Zhang, S; Nisoli, C; Crespi, VH; Schiffer, P,期刊:Applied Physics Letters, 页码:52504-52504 , 文章类型: Article,,卷期:2008年93-25]
- We study the configuration of magnetic moments on triangular lattices of single-domain ferromagnetic islands, examining the consequences of magnetostatic interactions in this frustrated geometry. By varying the island-is...
- Long-range ferromagnetism and giant magnetocaloric effect in type VIII Eu8Ga16Ge30 clathrates - art. no. 252505
[作者:Phan, MH; Woods, GT; Chaturvedi, A; Stefanoski, S; Nolas, GS; Srikanth, H,期刊:Applied Physics Letters, 页码:52505-52505 , 文章类型: Article,,卷期:2008年93-25]
- Long-range ferromagnetism and low-field giant magnetocaloric effect are observed in Eu8Ga16Ge30 with the type VIII clathrate crystal structure, a material that is better known for its thermoelectric properties. Magnetiza...
- X-ray absorption and magnetic circular dichroism characterization of a novel ferromagnetic MnNx phase in Mn/Si3N4 multilayers - art. no. 252506
[作者:Cespedes, E; Huttel, Y; Martinez, L; de Andres, A; Chaboy, J; Vila, M; Telling, ND; van der Laan, G; Prieto, C,期刊:Applied Physics Letters, 页码:52506-52506 , 文章类型: Article,,卷期:2008年93-25]
- Ferromagnetism above room temperature has been observed in Mn/Si3N4 multilayered films for the first time. Characterization of the structural and electronic properties was performed to study the ferromagnetic behavior of...
- From ab initio forecast of piezoelectric properties to growth of piezoelectric single crystals - art. no. 252901
[作者:Xin, J; Zheng, YQ; Kong, HK; Shi, EW,期刊:Applied Physics Letters, 页码:52901-52901 , 文章类型: Article,,卷期:2008年93-25]
- The piezoelectric properties of two langasite type compounds, Ca3TaAl3Si2O14 and Ca3NbAl3Si2O14, were predicted by first-principle calculation and single crystal of Ca3TaAl3Si2O14 was successfully grown by conventional C...
- Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device - art. no. 252902
[作者:Tsai, PH; Chang-Liao, KS; Yang, DW; Chung, YB; Wang, TK; Tzeng, PJ; Lin, CH; Lee, LS; Tsai, MJ; Chin, A,期刊:Applied Physics Letters, 页码:52902-52902 , 文章类型: Article,,卷期:2008年93-25]
- Charge-trapping type flash memory devices with various integrations of metal gates having different work functions and blocking oxides were investigated in this work. Improved erasing speed together with acceptable relia...
- Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate - art. no. 252903
[作者:Xu, QX; Xu, GB; Wang, WW; Chen, DP; Shi, SL; Han, ZS; Ye, TC,期刊:Applied Physics Letters, 页码:52903-52903 , 文章类型: Article,,卷期:2008年93-25]
- We have fabricated the thinnest equivalent oxide thickness of 0.62 nm HfLaON gate dielectric for TaN/HfLaON/SiOx gate stack with improved thermal stability and electrical characteristics. The HfLaON film was deposited us...
- Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)(2)S passivated GaAs(100) surfaces - art. no. 252905
[作者:Milojevic, M; Hinkle, CL; Aguirre-Tostado, FS; Kim, HC; Vogel, EM; Kim, J; Wallace, RM,期刊:Applied Physics Letters, 页码:52905-52905 , 文章类型: Article,,卷期:2008年93-25]
- Half-cycle atomic layer deposition reactions of trimethyl aluminum (TMA) and water on GaAs exposed to wet chemical sulfur treatments are studied for the formation of Al2O3. Trivalent oxides of gallium and arsenic are com...
- Elastic, dielectric, and piezoelectric properties of BaTeMo2O9 single crystal - art. no. 252906
[作者:Gao, ZL; Tao, XT; Yin, X; Zhang, WG; Jiang, MH,期刊:Applied Physics Letters, 页码:52906-52906 , 文章类型: Article,,卷期:2008年93-25]
- BaTeMo2O9 is a noncentrosymmetric single crystal for nonlinear optical applications. In this letter, we report complete set of elastic, dielectric, and piezoelectric constants of BaTeMo2O9 single crystal determined by re...
- Dielectric and structural properties of thin SrHfO3 layers on TiN - art. no. 252907
[作者:Lupina, G; Kozlowski, G; Dabrowski, J; Dudek, P; Lippert, G; Mussig, HJ,期刊:Applied Physics Letters, 页码:52907-52907 , 文章类型: Article,,卷期:2008年93-25]
- We studied several properties of thin amorphous and polycrystalline SrHfO3 layers on TiN in the context of memory capacitor applications. Amorphous SrHfO3 has the dielectric constant kappa=21 and is transformed upon rapi...
- Nanoscale doping fluctuation resolved by electrostatic force microscopy via the effect of surface band bending - art. no. 253102
[作者:Chin, SC; Chang, YC; Chang, CS; Woon, WY; Lin, LT; Tao, HJ,期刊:Applied Physics Letters, 页码:53102-53102 , 文章类型: Article,,卷期:2008年93-25]
- A technique for profiling doping fluctuation around source/drain regions on a sub-45-nm device is demonstrated. The mapping is achieved through the amplitude measurement of electrostatic force microscopy (EFM). A discove...
- Reduced carrier backscattering in heterojunction SiGe nanowire channels - art. no. 253105
[作者:Jiang, Y; Singh, N; Liow, TY; Lo, GQ; Chan, DSH; Kwong, DL,期刊:Applied Physics Letters, 页码:53105-53105 , 文章类型: Article,,卷期:2008年93-25]
- In this work, we investigate the effect of energy band profile modulation on carrier backscattering in SiGe nanowire (SGNW) heterojunction p-channel field effect transistors. The energy band profile is modulated by incre...
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