- Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods - art. no. 261104
[作者:Rauter, P; Fromherz, T; Winnerl, S; Zier, M; Kolitsch, A; Helm, M; Bauer, G,期刊:Applied Physics Letters, 页码:61104-61104 , 文章类型: Article,,卷期:2008年93-26]
- The molecular beam epitaxial (MBE) fabrication of blocked-impurity-band detectors (BIB) has been a technologically complex and delicate matter ever since its demonstration in silicon, and has not been adapted for other m...
- Intracavity terahertz generation inside a high-energy ultrafast soliton fiber laser - art. no. 261105
[作者:Matthaus, G; Ortac, B; Limpert, J; Nolte, S; Hohmuth, R; Voitsch, M; Richter, W; Pradarutti, B; Tunnermann, A,期刊:Applied Physics Letters, 页码:61105-61105 , 文章类型: Article,,卷期:2008年93-26]
- Intracavity terahertz emission inside a high-energy ultrafast Yb-doped fiber laser is presented. The terahertz radiation is generated by a transient photocurrent induced at the surface of a saturable InGaAs multiquantum ...
- High-quality InGaN/GaN heterojunctions and their photovoltaic effects - art. no. 261108
[作者:Zheng, XH; Horng, RH; Wuu, DS; Chu, MT; Liao, WY; Wu, MH; Lin, RM; Lu, YC,期刊:Applied Physics Letters, 页码:61108-61108 , 文章类型: Article,,卷期:2008年93-26]
- High-quality p-GaN/i-In0.1Ga0.9N/n-GaN heterojunctional epilayers are grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition. The Pendellosung fringes around the InGaN peak in high-resolu...
- Geometrical effects in the energy transfer mechanism for silicon nanocrystals and Er3+ - art. no. 261109
[作者:Choy, K; Lenz, F; Liang, XX; Marsiglio, F; Meldrum, A,期刊:Applied Physics Letters, 页码:61109-61109 , 文章类型: Article,,卷期:2008年93-26]
- Silicon nanoclusters (NCs) strongly sensitize the luminescence of Er3+ ions. Attempts to calculate the interaction distance have assumed that the Forster [Ann. Phys. 437, 55 (1948)] and Dexter [J. Chem. Phys. 21, 836 (19...
- Time and spectrally resolved enhanced fluorescence using silver nanoparticle impregnated polycarbonate substrates - art. no. 261114
[作者:Lagonigro, L; Peacock, AC; Rohrmoser, S; Hasell, T; Howdle, SM; Sazio, PJA; Lagoudakis, PG,期刊:Applied Physics Letters, 页码:61114-61114 , 文章类型: Article,,卷期:2008年93-26]
- Silver nanoparticle impregnated polycarbonate strips have been investigated as substrates for metal-enhanced photoluminescence of a blue emitting dye molecule (coumarin 102). By considering simultaneous time and spectral...
- Enhancing and tuning absorption properties of microwave absorbing materials using metamaterials - art. no. 261115
[作者:Zou, YH; Jiang, LY; Wen, SC; Shu, WX; Qing, YJ; Tang, ZX; Luo, HL; Fan, DY,期刊:Applied Physics Letters, 页码:61115-61115 , 文章类型: Article,,卷期:2008年93-26]
- We proposed and demonstrated a scheme to enhance and tune absorption properties of conventional microwave absorbing materials (MAMs) by metamaterials (MMs). By covering a MAM, say, carbonyl iron powder coating, with MMs ...
- Luminescent properties in the strain adjusted phosphor-free GaN based white light-emitting diode - art. no. 261117
[作者:Fang, H; Sang, LW; Zhao, LB; Qi, SL; Zhang, YZ; Yang, XL; Yang, ZJ; Zhang, GY,期刊:Applied Physics Letters, 页码:61117-61117 , 文章类型: Article,,卷期:2008年93-26]
- A kind of phosphor-free GaN based white light-emitting diode was fabricated with a strain adjusting InGaN interlayer. The origin of the strain adjusted white luminescent properties was studied with cathodoluminescence, a...
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