- Room-temperature-operating carbon nanotube single-hole transistors with significantly small gate and tunnel capacitances - art. no. 053112
[作者:Ohno, Y; Asai, Y; Maehashi, K; Inoue, K; Matsumoto, K,期刊:Applied Physics Letters, 页码:53112-53112 , 文章类型: Article,,卷期:2009年94-5]
- Carbon nanotube single-hole transistors operating at room temperature were realized. To obtain large charging energy, a 25-nm-long carbon nanotube channel was formed by shadow evaporation for small gate capacitance and a...
- In situ small-angle x-ray scattering study of nanostructure evolution during decomposition of arc evaporated TiAlN coatings - art. no. 053114
[作者:Oden, M; Rogstrom, L; Knutsson, A; Terner, MR; Hedstrom, P; Almer, J; Ilavsky, J,期刊:Applied Physics Letters, 页码:53114-53114 , 文章类型: Article,,卷期:2009年94-5]
- Small-angle x-ray scattering was used to study in situ decomposition of an arc evaporated TiAlN coating into cubic-TiN and cubic-AlN particles at elevated temperature. At the early stages of decomposition particles with ...
- A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns - art. no. 053509
[作者:Garcia, I; Rey-Stolle, I; Galiana, B; Algora, C,期刊:Applied Physics Letters, 页码:53509-53509 , 文章类型: Article,,卷期:2009年94-5]
- Photovoltaic conversion efficiencies of 32.6% and 30% at concentrations of 1000 and 3500 suns, respectively, are achieved in monolithic GaInP/GaAs dual-junction solar cells grown lattice matched on a GaAs substrate by me...
- Role of TaON interface for CuxO resistive switching memory based on a combined model - art. no. 053510
[作者:Zhou, P; Yin, M; Wan, HJ; Lu, HB; Tang, TA; Lin, YY,期刊:Applied Physics Letters, 页码:53510-53510 , 文章类型: Article,,卷期:2009年94-5]
- For the embedded application of the resistive switching memory using CuxO films, the controllable switching polarity and optimized low resistance state was investigated. Stable bipolar switching behavior was demonstrated...
- Junctionless multigate field-effect transistor - art. no. 053511
[作者:Lee, CW; Afzalian, A; Akhavan, ND; Yan, R; Ferain, I; Colinge, JP,期刊:Applied Physics Letters, 页码:53511-53511 , 文章类型: Article,,卷期:2009年94-5]
- This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed devi...
- Electrical depth profiling in thin SiON layers - art. no. 053116
[作者:Rozenblat, A; Rosenwaks, Y; Segev, L; Cohen, H,期刊:Applied Physics Letters, 页码:53116-53116 , 文章类型: Article,,卷期:2009年94-5]
- The internal structure of SiON films is extracted electrically, demonstrating an efficient, noncontact, nondestructive means for depth compositional analysis in gate oxides. The electrical data, obtained using x-ray phot...
- Dual nonlinear dielectric resonance and strong natural resonance in Ni/ZnO nanocapsules - art. no. 053119
[作者:Liu, XG; Jiang, JJ; Geng, DY; Li, BQ; Han, Z; Liu, W; Zhang, ZD,期刊:Applied Physics Letters, 页码:53119-53119 , 文章类型: Article,,卷期:2009年94-5]
- The electromagnetic characteristics of Ni/ZnO nanocapsules were studied at 2-18 GHz. The dual nonlinear dielectric resonance and strong natural resonance at 16.6 GHz contribute to excellent electromagnetic absorption. A ...
- A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors - art. no. 053513
[作者:Higashiwaki, M; Chen, Z; Chu, RM; Pei, Y; Keller, S; Mishra, UK; Hirose, N; Matsui, T; Mimura, T,期刊:Applied Physics Letters, 页码:53513-53513 , 文章类型: Article,,卷期:2009年94-5]
- The effects of thin SiNx deposition on AlGaN/GaN heterostructure field-effect transistors were systematically studied by comparing their electrical and device characteristics. Two aspects of the thin SiNx film deposition...
- Iridescent large-area ZrO2 photonic crystals using butterfly as templates - art. no. 053901
[作者:Chen, Y; Gu, JJ; Zhu, SM; Fan, TX; Zhang, D; Guo, QX,期刊:Applied Physics Letters, 页码:53901-53901 , 文章类型: Article,,卷期:2009年94-5]
- Intact ZrO2 (with refractive index of 2.12) replica, which is large in size (about 3x4 cm(2)), has been synthesized by using natural butterfly wings as templates. Microstructure characters of original butterfly wing scal...
- The role of aluminum oxide buffer layer in organic spin-valves performance - art. no. 053301
[作者:Zhan, YQ; Liu, XJ; Carlegrim, E; Li, FH; Bergenti, I; Graziosi, P; Dediu, V; Fahlman, M,期刊:Applied Physics Letters, 页码:53301-53301 , 文章类型: Article,,卷期:2009年94-5]
- The electronic structures of the 8-hydroxyquinoline-aluminum (Alq(3))/Al2O3/Co interfaces were studied by photoelectron spectroscopy. A strong interface dipole was observed, which leads to a reduction in the electron inj...
|