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  • Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures
    [作者:Takatori, S; Minh, PH; Estacio, E; Cadatal-Raduban, M; Nakazato, T; Shimizu, T; Bailon-Somintac, M; Somintac, A; Defensor, M; Gabayno, J; Awitan, FCB; Jaculbia, RB; Garcia, A; Ponseca, C; Salvador, A; Sarukura, N,期刊:OPTICAL MATERIALS, 页码:776-779 , 文章类型: Proceedings Paper,,卷期:2010年32-7]
  • We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH's), excited by femtosecond laser. Results showed that t...