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  • Fully Protective yet Functionalizable Monolayer on InP
    [作者:GONCALVES ANNEMARIE; MEZAILLES NICOLAS; MATHIEU CHARLES; LE FLOCH PASCAL; ETCHEBERRY ARNAUD,期刊:Chemistry of Materials, 页码:3114-3120 , 文章类型: Article,,卷期:2010年22-10]
  • A novel protective monolayer film on an n-InP semiconductor is obtained using a controlled photoelectrochemical process performed in liquid ammonia. Using a submillicoulombs per square centimeter spent charge and using a...
  • Li3V(MoO4)(3): A New Material for Both Li Extraction and Insertion
    [作者:MIKHAILOVA D; SARAPULOVA A; VOSS A; THOMAS A; OSWALD S; GRUNER W; TROTS D M; BRAMNIK N N; EHRENBERG H,期刊:Chemistry of Materials, 页码:3165-3173 , 文章类型: Article,,卷期:2010年22-10]
  • Besides topotactical Li insertion, Li deinsertion also is possible for the new potential electrode material Li3V(MoO4)(3), in contrast to isostructural Li3Fe(MoO4)(3). This new phase crystallizes in an orthorhombic NASIC...
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