- Fully Protective yet Functionalizable Monolayer on InP
[作者:GONCALVES ANNEMARIE; MEZAILLES NICOLAS; MATHIEU CHARLES; LE FLOCH PASCAL; ETCHEBERRY ARNAUD,期刊:Chemistry of Materials, 页码:3114-3120 , 文章类型: Article,,卷期:2010年22-10]
- A novel protective monolayer film on an n-InP semiconductor is obtained using a controlled photoelectrochemical process performed in liquid ammonia. Using a submillicoulombs per square centimeter spent charge and using a...
- Polar Hexagonal Tungsten Oxide (HTO) Materials: (1) Synthesis, Characterization, Functional Properties, and Structure Property Relationships in A(2)(MoO3)(3)(SeO3) (A = Rb+ and Ti+) and (2) Classification, Structural Distortions, and Second-Harmonic Generating Properties of Known Polar HTOs
[作者:CHANG HONG YOUNG; KIM SUN WOO; HALASYAMANI P SHIV,期刊:Chemistry of Materials, 页码:3241-3250 , 文章类型: Article,,卷期:2010年22-10]
- Two new polar noncentrosymmetric (NCS) oxides, Rb-2(MoO3)(3)(SeO3) and Tl-2(MoO3)(3)(SeO3), have been synthesized and characterized. The materials exhibit the layered hexagonal tungsten oxide (HTO) structural topology Cl...
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