- Etching rate, optical transmittance, and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by rf magnetron cosputtering
[作者:Nakata, S; Nagai, S; Kumeda, M; Kawae, T; Morimoto, A; Shimizu, T,期刊:Journal Of Vacuum Science & Technology B, 页码:1373-1378 , 文章类型: Article,,卷期:2008年26-4]
- Radio-frequency magnetron cosputtering by setting an Al metal plate on an Al2O3 target is an effective method for fabricating Al-rich Al2O3 thin film, which is used as a charge storage layer for nonvolatile Al2O3 memory....
- Interfacial effects in thin films of polymeric semiconductors
[作者:Rivnay, J; Jimison, LH; Toney, MF; Preiner, M; Melosh, NA; Salleo, A,期刊:Journal Of Vacuum Science & Technology B, 页码:1454-1460 , 文章类型: Article,,卷期:2008年26-4]
- The surface onto which polymeric semiconductors are cast from solution plays an important role in determining the electrical transport properties of the polymeric thin film. The authors use synchrotron-based x-ray diffra...
- Synthesis and characterization of TiO2-Ge nanocomposites
[作者:Goyal, A; Rumaiz, AK; Miao, Y; Hazra, S; Ni, C; Shah, SI,期刊:Journal Of Vacuum Science & Technology B, 页码:1315-1320 , 文章类型: Article,,卷期:2008年26-4]
- Thin films of TiO2-Ge nanocomposites were deposited by rf magnetron sputtering from a composite target prepared by pressing a mixture of TiO2 and Ge powders with a ratio 2:1. Thin films were deposited at various rf power...
- Preparation and field emission property of nanodiamond-cluster-embedded diamondlike carbon film
[作者:Xie, WG; Chen, J; Ming, WW; Chen, J; Zhou, J; Deng, SZ; Xu, NS,期刊:Journal Of Vacuum Science & Technology B, 页码:1321-1325 , 文章类型: Article,,卷期:2008年26-4]
- The authors prepared nanodiamond-cluster-embedded diamondlike carbon (DLC) composite films by electrophoresis deposition followed by magnetic filtered cathodic vacuum arc plasma deposition. Nanodiamond clusters are unifo...
- Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia
[作者:D'Emic, C; Newbury, J; Scerbo, C; Copel, M; Gordon, M,期刊:Journal Of Vacuum Science & Technology B, 页码:1382-1389 , 文章类型: Article,,卷期:2008年26-4]
- Ultrathin silicon oxynitrides have been used successfully as gate dielectrics for advanced complementary metal-oxide semiconductor technologies. Here, the authors compare the growth and material properties of oxynitrides...
- Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3
[作者:Zhang, J; Walsh, S; Brooks, C; Schlom, DG; Brillson, LJ,期刊:Journal Of Vacuum Science & Technology B, 页码:1466-1471 , 文章类型: Article,,卷期:2008年26-4]
- The authors report a depth-resolved cathodoluminescence spectroscopy study of defects and their distributions in SrTiO3 single crystals and epilayers. In SrTiO3 single crystals, the dominant defects are oxygen vacancies ...
- Direct UV-imprint lithography using conductive nanofiller-dispersed UV-curable resin
[作者:Choi, JH; Lee, SW; Choi, DG; Kim, KD; Jeong, JH; Lee, ES,期刊:Journal Of Vacuum Science & Technology B, 页码:1390-1394 , 文章类型: Article,,卷期:2008年26-4]
- In many early investigations of the ultraviolet (UV) imprinting process, imprint resists served as sacrificial etch barrier masks for pattern transfer onto the underlying layer. In this study, conductive photocurable res...
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