- Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology - art. no. 153508
[作者:Chiu, HC; Yang, CW; Chen, CH; Fu, JS; Chien, FT,期刊:Applied Physics Letters, 页码:53508-53508 , 文章类型: Article,,卷期:2011年99-15]
- In this study, an enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) using N2O plasma oxidation process has been performed. Before the gate metal deposition, the AlGaN barrier layer was treated ...
- Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors - art. no. 153510
[作者:Lu, TM; Lee, CH; Huang, SH; Tsui, DC; Liu, CW,期刊:Applied Physics Letters, 页码:53510-53510 , 文章类型: Article,,卷期:2011年99-15]
- In this paper, we present our study of the maximum electron density, n(max), accessible via low-temperature transport experiments in enhancement-mode Si/Si1-xGex hetcrostructure field-effect transistors. Experimentally, ...
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