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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共171条记录   5 kV multielectron beam lithography: MAPPER tool and resist process characterization [作者：Rio, D; Constancias, C; Martin, M; Icard, B; van Nieuwstadt, J; Vijverberg, J; Pain, L,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C14-C6C20 , 文章类型： Article，,卷期：2010年28-6] A multielectron beam tool from MAPPER lithography was installed in LETI premises in July 2009. It is based on low voltage lithography. In order to prepare acceptance tests, a preliminary study was carried out with a Leic... Excitation and imaging of resonant optical modes of Au triangular nanoantennas using cathodoluminescence spectroscopy [作者：Kumar, A; Fung, KH; Mabon, JC; Chow, E; Fang, NX,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C21-C6C25 , 文章类型： Article，,卷期：2010年28-6] Cathodoluminescence (CL) imaging spectroscopy is an important technique to understand the resonant behavior of optical nanoantennas. The authors report high-resolution CL spectroscopy of triangular gold nanoantennas desi... Field induced shape and work function modification for the ZrO/W(100) Schottky cathode [作者：Liu, K; Schwind, GA; Swanson, LW; Campbell, JA,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C26-C6C33 , 文章类型： Article，,卷期：2010年28-6] The origin of the frequently observed long and short term current drifts after a change in the extractor voltage for the ZrO/W(100) Schottky cathode has been investigated. It has been found that a reversible, field depen... Performance characterization of negative resists for sub-10-nm electron beam lithography [作者：Bonam, R; Verhagen, P; Munder, A; Hartley, J,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C34-C6C40 , 文章类型： Article，,卷期：2010年28-6] As scaling continues, the need for reliable sub-10-nm electron beam lithography is apparent. Throughput is a major drawback and complex test structure fabrication would be constrained by practical limits on writing time.... Simulation of scanning electron microscope images taking into account local and global electromagnetic fields [作者：Babin, S; Borisov, SS; Ito, H; Ivanchikov, A; Suzuki, M,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C41-C6C47 , 文章类型： Article，,卷期：2010年28-6] The authors report the development of a simulation tool with unique capabilities to comprehensively model a scanning electron microscope (SEM) signal. This includes electron scattering, charging, and detector settings, a... Simulation of electron beam lithography of nanostructures [作者：Stepanova, M; Fito, T; Szabo, Z; Alti, K; Adeyenuwo, AP; Koshelev, K; Aktary, M; Dew, SK,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C48-C6C57 , 文章类型： Article，,卷期：2010年28-6] The authors report a numeric simulation tool that they developed for the modeling and analysis of electron beam lithography (EBL) of nanostructures employing a popular positive tone resist polymethylmethacrylate (PMMA). ... Sub-10-nm half-pitch electron-beam lithography by using poly(methyl methacrylate) as a negative resist [作者：Duan, HG; Winston, D; Yang, JKW; Cord, BM; Manfrinato, VR; Berggren, KK,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C58-C6C62 , 文章类型： Article，,卷期：2010年28-6] Developing high-resolution resists and processes for electron-beam lithography is of great importance for high-density magnetic storage, integrated circuits, and nanoelectronic and nanophotonic devices. Until now, hydrog... Impact of development chemistry on extreme ultraviolet resist performance [作者：Gronheid, R,期刊：Journal Of Vacuum Science & Technology B, 页码：C6S1-C6S5 , 文章类型： Article，,卷期：2010年28-6] Tetrabutyl ammonium hydroxide (TBAH) has recently been identified as a promising material for aqueous base development of extreme ultraviolet (EUV) photoresists. In this article, the merits and applicability of this new ... High sensitivity nonchemically amplified molecular resists based on photosensitive dissolution inhibitors [作者：Lawson, RA; Tolbert, LM; Henderson, CL,期刊：Journal Of Vacuum Science & Technology B, 页码：C6S12-C6S18 , 文章类型： Article，,卷期：2010年28-6] A new class of nonchemically amplified molecular resists has been made based on the use of photosensitive protecting groups. The deprotection during exposure converts a dissolution inhibiting compound into a dissolution ... Photopatternable inorganic hardmask [作者：Telecky, A; Xie, P; Stowers, J; Grenville, A; Smith, B; Keszler, DA,期刊：Journal Of Vacuum Science & Technology B, 页码：C6S19-C6S22 , 文章类型： Article，,卷期：2010年28-6] The authors present a directly photopatternable inorganic hardmask for 193 nm lithography based on the solution-deposited dielectric metal oxide sulfate (MSOx) system. To demonstrate pattern fidelity, 18 nm half-pitch fe... Reflective electron beam lithography: A maskless ebeam direct write lithography approach using the reflective electron beam lithography concept [作者：Petric, P; Bevis, C; McCord, M; Carroll, A; Brodie, A; Ummethala, U; Grella, L; Cheung, A; Freed, R,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C6-C6C13 , 文章类型： Article，,卷期：2010年28-6] Reflective electron beam litography (REBL) utilizes several novel technologies to generate and expose lithographic patterns at throughputs that could make ebeam maskless lithography feasible for high volume manufacturing... Analysis of surface electromagnetic wave resonant structures for potential application in an array of compact photoelectron sources [作者：Choi, HJ; Groves, TR,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C63-C6C68 , 文章类型： Article，,卷期：2010年28-6] Two different surface electromagnetic wave assisted light concentrators are analyzed that can, in principle, be integrated into an array with each concentrator delivering optical power to a photoelectron emitting metal n... Inspection of open defects in a thin film transistor-liquid crystal display panel by using a low-energy electron microcolumn [作者：Oh, TS; Kim, DW; Kim, YC; Ahn, S; Lee, GH; Kim, HS,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C69-C6C73 , 文章类型： Article，,卷期：2010年28-6] The demand on the electron beam (e-beam) for the inspection of semiconductor devices or display panel is rapidly increasing since e-beam cannot only monitor the small structures but also has the potential of detecting el... Brightness limitations of cold field emitters caused by Coulomb interactions [作者：Cook, B; Verduin, T; Hagen, CW; Kruit, P,期刊：Journal Of Vacuum Science & Technology B, 页码：C6C74-C6C79 , 文章类型： Article，,卷期：2010年28-6] Emission theory predicts that high brightness cold field emitters can enhance imaging in the electron microscope. This (neglecting chromatic aberration) is because of the large (coherent) probe current available from a h... Direct transformation of a resist pattern into a graphene field effect transistor through interfacial graphitization of liquid gallium [作者：Fujita, J; Miyazawa, Y; Ueki, R; Sasaki, M; Saito, T,期刊：Journal Of Vacuum Science & Technology B, 页码：C6D1-C6D4 , 文章类型： Article，,卷期：2010年28-6] The authors found that an extremely thin resist pattern on a silicon dioxide can be directly transformed into a graphene channel through interfacial graphitization of liquid gallium. These patterned graphene field effect... Study of transport properties in graphene monolayer flakes on SiO2 substrates [作者：Tirado, JM; Nezich, D; Zhao, X; Chung, JW; Kong, J; Palacios, T,期刊：Journal Of Vacuum Science & Technology B, 页码：C6D11-C6D14 , 文章类型： Article，,卷期：2010年28-6] This work studies the transport properties of field effect transistors fabricated on graphene single monolayer flakes. In particular, carrier mobilities in graphene for electrons and holes as a function of the vertical e...