- Submicron organic nanofiber devices with different anode-cathode materials: A simple approach
[作者:Henrichsen, H; Sturm, H; Boggild, P; Hansen, O,期刊:Journal Of Vacuum Science & Technology B, 页码:617-622 , 文章类型: Article,,卷期:2010年28-3]
- The authors present a simple general method for simultaneously producing tens of submicron electrode gaps with different cathode and anode materials on top of nanofibers, nanowires, and nanotubes, with an optional gap si...
- Effects of focused MeV ion beam irradiation on the roughness of electrochemically micromachined silicon surfaces
[作者:Ow, YS; Azimi, S; Breese, MBH; Teo, EJ; Mangaiyarkarasi, D,期刊:Journal Of Vacuum Science & Technology B, 页码:500-505 , 文章类型: Article,,卷期:2010年28-3]
- The authors compare the effects of focused and broad MeV ion beam irradiation on the surface roughness of silicon wafers after subsequent electrochemical anodization. With a focused beam, the roughness increases rapidly ...
- ZnCdSe nanowires grown by molecular beam epitaxy
[作者:Lan, BW; Hsiao, CH; Hung, SC; Chang, SJ; Young, SJ; Cheng, YC; Chih, SH; Huang, BR,期刊:Journal Of Vacuum Science & Technology B, 页码:613-616 , 文章类型: Article,,卷期:2010年28-3]
- The authors report the growth of high density ternary Zn1-xCdxSe (x=0.1,0.3) nanowires on an oxidized Si(100) substrate by molecular beam epitaxy and the fabrication of ZnCdSe nanowire photodetectors. It was found that t...
- Depth profile analysis of helium in silicon with high-resolution elastic recoil detection analysis
[作者:Tomita, M; Akutsu, H; Oshima, Y; Sato, N; Mure, S; Fukuyama, H; Ichihara, C,期刊:Journal Of Vacuum Science & Technology B, 页码:554-557 , 文章类型: Article,,卷期:2010年28-3]
- Helium depth profiling in silicon was investigated by high-resolution elastic recoil detection analysis (HERDA) using a high-resolution Rutherford backscattering spectrometry system. A 0.7 mu m Mylar film was installed i...
- Effect of copper barrier dielectric deposition process on characterization of copper interconnect
[作者:Cheng, YL; Chiu, TJ; Wei, BJ; Wang, HJ; Wu, J; Wang, YL,期刊:Journal Of Vacuum Science & Technology B, 页码:567-572 , 文章类型: Article,,卷期:2010年28-3]
- The effect of copper (Cu) barrier film deposition process on the Cu interconnects was investigated, including the waiting time between Cu chemical mechanical polishing and the barrier dielectric deposition, the preheatin...
- Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition
[作者:Cheng, YL; Chen, SA; Chiu, TJ; Wu, J; Wei, BJ; Chang, HJ,期刊:Journal Of Vacuum Science & Technology B, 页码:573-576 , 文章类型: Article,,卷期:2010年28-3]
- The influence of nitrogen flow on the electrical properties of silicon carbide (SiC) barrier dielectrics prepared by plasma-enhanced chemical vapor deposition was reported. Experimental results showed that the leakage cu...
- Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques
[作者:Rommel, M; Spoldi, G; Yanev, V; Beuer, S; Amon, B; Jambreck, J; Petersen, S; Bauer, AJ; Frey, L,期刊:Journal Of Vacuum Science & Technology B, 页码:595-607 , 文章类型: Article,,卷期:2010年28-3]
- Scanning probe microscopy techniques and, in particular, scanning spreading resistance microscopy (SSRM) were used for a detailed characterization of focused ion beam (FIB) induced damage in the surrounding of purposely ...
- Photoluminescence and photoreflectance studies of InAs self-assembled nanostructures on GaAs(631) substrates
[作者:Garcia-Linan, G; Cruz-Hernandez, E; Vazquez-Cortes, D; Lopez-Luna, E; Mendez-Garcia, VH; Lopez-Lopez, M; Hernandez-Rosas, J; Zamora-Peredo, L,期刊:Journal Of Vacuum Science & Technology B, 页码:648-648 , 文章类型: Proceedings Paper,,卷期:2010年28-3]
- The authors report the photoluminescence and photoreflectance characteristics of molecular beam epitaxy grown InAs nanostructures on GaAs (631)-oriented substrates. Prior to the InAs growth, self-assembled nanochannels o...
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