- Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor
[作者:Cheng, CC; Chien, CH; Luo, GL; Liu, JC; Chen, YC; Chang, YF; Wang, SY; Kei, CC; Hsiao, CN; Chang, CY,期刊:Journal Of Vacuum Science & Technology B, 页码:130-133 , 文章类型: Article,,卷期:2009年27-1]
- The authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasi...
- Effect of annealing and electrical properties of high-kappa thin films grown by atomic layer deposition using carboxylic acids as oxygen source
[作者:Rauwel, E; Ducroquet, F; Rauwel, P; Willinger, MG; Matko, I; Pinna, N,期刊:Journal Of Vacuum Science & Technology B, 页码:230-235 , 文章类型: Article,,卷期:2009年27-1]
- Titania and hafnia thin films were deposited by atomic layer deposition using metal alkoxides and carboxylic acids as oxygen source. The effect of annealing under nitrogen on the densification of the films and on the res...
- Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer
[作者:Albertin, KF; Pereyra, I,期刊:Journal Of Vacuum Science & Technology B, 页码:236-245 , 文章类型: Article,,卷期:2009年27-1]
- Metal oxide-semiconductor capacitors with TiOx deposited with different O-2 partial pressures (30%, 35%, and 40%) and annealed at 550, 750, and 1000 degrees C were fabricated and characterized. Fourier transform infrared...
- Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal
[作者:Galata, SF; Mavrou, G; Tsipas, P; Sotiropoulos, A; Panayiotatos, Y; Dimoulas, A,期刊:Journal Of Vacuum Science & Technology B, 页码:246-248 , 文章类型: Article,,卷期:2009年27-1]
- In this work the authors investigate La2O3 and ZrO2/La2O3 high-k gate dielectrics on p-type Ge metal-insulator-semiconductor capacitors. La2O3 on Ge exhibits good electrical properties in terms of interface states densit...
- Gd silicate: A high-k dielectric compatible with high temperature annealing
[作者:Gottlob, HDB; Stefani, A; Schmidt, M; Lemme, MC; Kurz, H; Mitrovic, IZ; Werner, M; Davey, WM; Hall, S; Chalker, PR; Cherkaoui, K; Hurley, PK; Piscator, J; Engstrom, O; Newcomb, SB,期刊:Journal Of Vacuum Science & Technology B, 页码:249-252 , 文章类型: Article,,卷期:2009年27-1]
- The authors report on the investigation of amorphous Gd-based silicates as high-k dielectrics. Two different stacks of amorphous gadolinium oxide (Gd2O3) and silicon oxide (SiO2) on silicon substrates are compared after ...
- Computational and experimental studies of phase separation in pentacene:C-60 mixtures
[作者:Zheng, Y; Pregler, SK; Myers, JD; Ouyang, JM; Sinnott, SB; Xue, JG,期刊:Journal Of Vacuum Science & Technology B, 页码:169-179 , 文章类型: Article,,卷期:2009年27-1]
- Phase separation in molecular donor-acceptor mixtures composed of pentacene and C-60 is examined using a combination of computational and experimental methods. Classical molecular dynamics simulations of the relaxation p...
- Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning
[作者:Lee, HS; Wi, JS; Nam, SW; Kim, HM; Kim, KB,期刊:Journal Of Vacuum Science & Technology B, 页码:188-192 , 文章类型: Article,,卷期:2009年27-1]
- It is identified that the development of hydrogen-silsesquioxane resist after electron-beam exposure, by using a 25% tetramethylammonium-hydroxide (TMAH) developer, almost stops after 1 min of development time and it sev...
- Electrical properties of nanotip-assisted microplasma devices
[作者:Kim, SO; Ko, YS; Gu, HB,期刊:Journal Of Vacuum Science & Technology B, 页码:193-197 , 文章类型: Article,,卷期:2009年27-1]
- Nanotip-assisted microplasma devices have been fabricated and characterized in Ne, Ar, or Ne/2% Ar. The electrical properties of the glow discharge in three different environments, Ne, Ar, and Ne/2% Ar, have been examine...
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