- Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting
[作者:Tabbal, M; Kim, T; Warrender, JM; Aziz, MJ; Cardozo, BL; Goldman, RS,期刊:Journal Of Vacuum Science & Technology B, 页码:1847-1852 , 文章类型: Article,,卷期:2007年25-6]
- The authors demonstrate the formation of pn and nn(+) junctions based on silicon supersaturated with sulfur (up to 0.46 at. %) using a combination of ion implantation and pulsed laser melting. Silicon wafers were implant...
- Extreme ultraviolet lithography: From research to manufacturing
[作者:La Fontaine, B; Deng, Y; Kim, RH; Levinson, HJ; Okoroanyanwu, U; Sandberg, R; Wallow, T; Wood, O,期刊:Journal Of Vacuum Science & Technology B, 页码:2089-2093 , 文章类型: Article,,卷期:2007年25-6]
- The authors explore the critical issues remaining for the introduction of extreme ultraviolet lithography (EUVL) in semiconductor manufacturing. Among all technical issues, source power appears to be the most significant...
- Nanoscale patterning in high resolution HSQ photoresist by interferometric lithography with tabletop extreme ultraviolet lasers
[作者:Wachulak, PW; Capeluto, MG; Marconi, MC; Patel, D; Menoni, CS; Rocca, JJ,期刊:Journal Of Vacuum Science & Technology B, 页码:2094-2097 , 文章类型: Article,,卷期:2007年25-6]
- Arrays of nanodots and nanoholes were patterned with a highly coherent tabletop 46.9 nm laser on high resolution hydrogen silsesquioxane photoresist using multiple exposure interferometric lithography. The authors observ...
- Growth and printability of multilayer phase defects on extreme ultraviolet mask blanks
[作者:Liang, T; Ultanir, E; Zhang, G; Park, SJ; Anderson, E; Gullikson, E; Naulleau, P; Salmassi, F; Mirkarimi, P; Spiller, E; Baker, S,期刊:Journal Of Vacuum Science & Technology B, 页码:2098-2103 , 文章类型: Article,,卷期:2007年25-6]
- The ability to fabricate defect-free reflective Mo-Si multilayer (ML) blanks is a well-recognized challenge in enabling extreme ultraviolet (EUV) lithography for semiconductor manufacturing. Both the specification and re...
- Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy-patterned devices
[作者:Fuechsle, M; Ruea, FJ; Reusch, TCG; Mitic, M; Simmons, MY,期刊:Journal Of Vacuum Science & Technology B, 页码:2562-2567 , 文章类型: Article,,卷期:2007年25-6]
- The authors have developed a complete electron beam lithography (EBL)-based alignment scheme for making multiterminal Ohmic contacts and gates to buried, planar, phosphorus-doped nanostructures in silicon lithographicall...
- Adaptive wiring for 20 nm scale epitaxial silicon Ohmic contacts to silicon nanowires
[作者:Rooks, MJ; Cohen, GM; Chu, JO; Solomon, PM; Ott, JA; Miller, RJ; Viswanathan, R; Haensch, W,期刊:Journal Of Vacuum Science & Technology B, 页码:2572-2576 , 文章类型: Article,,卷期:2007年25-6]
- Contacts to silicon nanowires are formed by etching holes through a dielectric stack of silicon dioxide and silicon nitride. P-type, in situ doped epitaxial silicon is grown through the holes, then polished flat and sili...
- Highly selective zero-bias plasma etching of GaN over AlGaN
[作者:Schuette, ML; Lu, W,期刊:Journal Of Vacuum Science & Technology B, 页码:1870-1874 , 文章类型: Article,,卷期:2007年25-6]
- Highly selective, low-damage etching of GaN over AlGaN is realized by zero-bias, nitrogen-rich N-2/Cl-2/O-2 inductively coupled plasma, affording sub-10-nm/min etch rates and rms roughness of 3 angstrom, favorable for ga...
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