- Comparison of monomer and polymer resists in thermal nanoimprint lithography
[作者：Zelsmann, M; Toralla, K; De Girolamo, J; Boutry, D; Gourgon, C,期刊：Journal Of Vacuum Science & Technology B, 页码：2430-2433 , 文章类型： Article，,卷期：2008年26-6]
- In this article, the authors compare a polymer resist to a thermally curable monomer resist in a full 8 in. wafer thermal nanoimprint lithography process. Using exactly the same imprinting conditions, the authors compare...
- Exploration of etch step interactions in the dual patterning process for process modeling
[作者：Melvin, LS; Ward, BS; Song, H; Rhie, SU; Lucas, KD; Wiaux, V; Verhaegen, S; Maenhoudt, M,期刊：Journal Of Vacuum Science & Technology B, 页码：2434-2440 , 文章类型： Article，,卷期：2008年26-6]
- Double patterning is a manufacturing process targeted for the 22 nm half pitch manufacturing node that harbors strong potential for reaching high volume manufacturing. The double patterning process requires twice as many...
- Photomask image enhancement using grating-generated surface waves
[作者：Lafferty, NV; Bourov, A; Estroff, A; Smith, BW,期刊：Journal Of Vacuum Science & Technology B, 页码：2192-2196 , 文章类型： Article，,卷期：2008年26-6]
- In recent years, the anomalous transmission of subwavelength apertures has become an emergent subject within the physical sciences. While the gain mechanism of these structures is still uncertain, the effect has been obs...
- Catalyst patterning for carbon nanotube growth on elevating posts by self-aligned double-layer electron beam lithography
[作者：Haffner, M; Heeren, A; Haug, A; Schuster, E; Sagar, A; Fleischer, M; Peisert, H; Burghard, M; Chasse, T; Kern, DP,期刊：Journal Of Vacuum Science & Technology B, 页码：2447-2450 , 文章类型： Article，,卷期：2008年26-6]
- For gas-flow aligned growth of carbon nanotubes (CNTs), it is important to minimize interaction of the growing CNTs with the substrate. The authors present a method to fabricate thin catalyst films on top of protruding h...
- Preferential orientation effects in partial melt laser crystallization of silicon
[作者：Witte, DJ; Masbou, MPA; Crnogorac, F; Pease, RFW; Pickard, DS,期刊：Journal Of Vacuum Science & Technology B, 页码：2455-2459 , 文章类型： Article，,卷期：2008年26-6]
- The ability to produce a known crystalline orientation in semiconductor materials is essential for many applications, including monolithic three-dimensional integration of devices. In particular, crystallization must be ...
- Effects of mask absorber structures on the extreme ultraviolet lithography
[作者：Seo, HS; Lee, DG; Kim, H; Huh, S; Ahn, BS; Han, H; Kim, D; Kim, SS; Cho, HK; Gullikson, EM,期刊：Journal Of Vacuum Science & Technology B, 页码：2208-2214 , 文章类型： Article，,卷期：2008年26-6]
- In this paper, the authors present the results of an investigation of the dependence of mask absorber thickness on the extreme ultraviolet lithography (EUVL) and suggest a new mask structure to minimize shadowing effects...
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