- Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress - art. no. 01AA04
[作者:Toledano-Luque, M; Kaczer, B; Roussel, P; Cho, MJ; Grasser, T; Groeseneken, G,期刊:Journal Of Vacuum Science & Technology B, 页码:AA104-AA104 , 文章类型: Article,,卷期:2011年29-1]
- The authors study the statistical properties of individual defects in n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) using time dependent defect spectroscopy. This technique is based on the analysis...
- Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor - art. no. 01AA05
[作者:Roll, G; Jakschik, S; Goldbach, M; Wachowiak, A; Mikolajick, T; Frey, L,期刊:Journal Of Vacuum Science & Technology B, 页码:AA105-AA105 , 文章类型: Article,,卷期:2011年29-1]
- In this article, the authors analyze the impact of germanium amorphization on the interface defect concentration of state of the art high-k metal gate metal-oxide-semiconductor field-effect transistors. The gate etch is ...
- Study of the physical and electrical degradation of thin oxide films by atomic force microscope - art. no. 01AA06
[作者:Hourani, W; Gautier, B; Militaru, L; Albertini, D; Descamps-Mandine, A,期刊:Journal Of Vacuum Science & Technology B, 页码:AA106-AA106 , 文章类型: Article,,卷期:2011年29-1]
- The hillocks created by the application of ramped voltage stress on thin oxide films have been imaged using different modes of the atomic force microscope (AFM) and using conductive or insulating tips, leading to the con...
- Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics - art. no. 011027
[作者:Katz, EJ; Zhang, Z; Hughes, HL; Chung, KB; Lucovsky, G; Brillson, LJ,期刊:Journal Of Vacuum Science & Technology B, 页码:11027-11027 , 文章类型: Article,,卷期:2011年29-1]
- We have used nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of device-tolerant oxides to measure the energy levels and spatial distribution of defects within nanocrystalline grains in an alpha-SiO2 mat...
- Control of semiconductor quantum dot nanostructures: Variants of SixGe1-x/Si quantum dot molecules - art. no. 011029
[作者:Murphy, JK; Hull, R; Pyle, D; Wang, H; Gray, J; Floro, J,期刊:Journal Of Vacuum Science & Technology B, 页码:11029-11029 , 文章类型: Article,,卷期:2011年29-1]
- We examine variations in the basic structure of quantum dot molecules (fourfold quantum dot nanostructures forming around a central facetted pit) in the SixGe(1-x)/Si(100) system. Arrays of quantum dot molecules are seed...
- Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates - art. no. 01AA07
[作者:Campabadal, F; Rafi, JM; Zabala, M; Beldarrain, O; Faigon, A; Castan, H; Gomez, A; Garcia, H; Duenas, S,期刊:Journal Of Vacuum Science & Technology B, 页码:AA107-AA107 , 文章类型: Article,,卷期:2011年29-1]
- In this work, the electrical characteristics of different atomic layer deposited high-permittivity dielectric films (Al2O3, HfO2, and a nanolaminate of them), with a physical thickness of about 10 nm, are evaluated. An e...
- Recent trends in bias temperature instability - art. no. 01AB01
[作者:Kaczer, B; Grasser, T; Franco, J; Toledano-Luque, M; Roussel, PJ; Cho, M; Simoen, E; Groeseneken, G,期刊:Journal Of Vacuum Science & Technology B, 页码:AB101-AB101 , 文章类型: Article,,卷期:2011年29-1]
- Several trends occurring in the past few years in our understanding of bias temperature instability (BTI) are reviewed. Among the most important is the shift toward analyzing BTI relaxation with the tools originally deve...
- Dielectric breakdown in polycrystalline hafnium oxide gate dielectrics investigated by conductive atomic force microscopy - art. no. 01AB02
[作者:Iglesias, V; Porti, M; Nafria, M; Aymerich, X; Dudek, P; Bersuker, G,期刊:Journal Of Vacuum Science & Technology B, 页码:AB102-AB102 , 文章类型: Article,,卷期:2011年29-1]
- The relationship between the topographical and electrical properties of the polycrystalline HfO2 layer has been investigated using conductive atomic force microscopy under ultrahigh vacuum conditions. Its high lateral re...
- Inhibition of carbon growth and removal of carbon deposits on extreme ultraviolet lithography mirrors by extreme ultraviolet irradiation in the presence of water, oxygen, or oxygen/ozone mixtures - art. no. 011030
[作者:Niibe, M; Koida, K; Kakutani, Y,期刊:Journal Of Vacuum Science & Technology B, 页码:11030-11030 , 文章类型: Article,,卷期:2011年29-1]
- Experiments involving the inhibition of carbon growth and removal of carbon deposits on extreme ultraviolet (EUV) lithography mirrors were carried out. First, a carbon film was deposited on a Ru-capped Mo/Si multilayer m...
- Dielectric layers suitable for high voltage integrated trench capacitors - art. no. 01AB04
[作者:Vom Dorp, J; Erlbacher, T; Bauer, AJ; Ryssel, H; Frey, L,期刊:Journal Of Vacuum Science & Technology B, 页码:AB104-AB104 , 文章类型: Article,,卷期:2011年29-1]
- In this work, two different dielectric stacks consisting of silicon dioxide (SiO2) and silicon nitride (Si3N4) are analyzed regarding their suitability as dielectrics in a high voltage trench capacitor. The processing of...
- Performance characteristics of GaN-based light-emitting diodes fabricated with AgNi, AgCu, and AgAl-alloy reflectors - art. no. 011032
[作者:Kim, H; Lee, SN,期刊:Journal Of Vacuum Science & Technology B, 页码:11032-11032 , 文章类型: Article,,卷期:2011年29-1]
- We report on the performance characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag-alloy p-type reflectors including AgNi, AgCu, and AgAl. Compared to the reference LEDs fabricated with Ag, LEDs fa...
- Noncontact metrology for inversion charge carrier mobility by corona charge and photovoltage measurements on blank wafers with a gate dielectric - art. no. 01AB05
[作者:Everaert, JL; Rosseel, E; Pap, A; Meszaros, A; Dekoster, J; Pavelka, T,期刊:Journal Of Vacuum Science & Technology B, 页码:AB105-AB105 , 文章类型: Article,,卷期:2011年29-1]
- An analysis method is presented for noncontact metrology for inversion charge carrier mobility. It is based on determining the sheet resistance of the inversion charge carriers by charge spreading metrology. To calculate...
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