- Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells
[作者:Singh, SD; Dixit, VK; Porwal, S; Kumar, R; Srivastava, AK; Ganguli, T; Sharma, TK; Oak, SM,期刊:Applied Physics Letters, 页码:111912-111912 , 文章类型: Article,,卷期:2010年97-11]
- The issue of type-II band alignment for InP/GaAs heterostructure is addressed by means of simple layer architecture of ultrathin quantum wells (QWs). From specific signatures of the radiative recombination in type-II QWs...
- Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3-delta films
[作者:Yan, XB; Xia, YD; Xu, HN; Gao, X; Li, HT; Li, R; Yin, J; Liu, ZG,期刊:Applied Physics Letters, 页码:112101-112101 , 文章类型: Article,,卷期:2010年97-11]
- The effects of the electroforming polarity on the bipolar resistive switching characteristics in SrTiO3-delta thin films have been investigated. The conduction mechanisms of high resistance state and low resistance state...
- Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes
[作者:Zainal, N; Novikov, SV; Mellor, CJ; Foxon, CT; Kent, AJ,期刊:Applied Physics Letters, 页码:112102-112102 , 文章类型: Article,,卷期:2010年97-11]
- Measurements of the current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN, double barrier resonant tunneling diodes are presented. Clear and reproducible negative differential resistance effects are obse...
- Surface, bulk, and interface electronic properties of nonpolar InN
[作者:Linhart, WM; Veal, TD; King, PDC; Koblmuller, G; Gallinat, CS; Speck, JS; McConville, CF,期刊:Applied Physics Letters, 页码:112103-112103 , 文章类型: Article,,卷期:2010年97-11]
- The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at th...
- Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
[作者:Chen, TC; Chang, TC; Tsai, CT; Hsieh, TY; Chen, SC; Lin, CS; Hung, MC; Tu, CH; Chang, JJ; Chen, PL,期刊:Applied Physics Letters, 页码:112104-112104 , 文章类型: Article,,卷期:2010年97-11]
- In this letter, we investigate the impact of the light illumination on the stability of indium-gallium-zinc oxide thin film transistors under positive gate-bias stress. The noticeable decrease in threshold voltage (V-t) ...
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