- Suppression of boron-oxygen defects in p-type Czochralski silicon by germanium doping (vol 97, 051903, 2010)
[作者:Yu, XG; Wang, P; Chen, P; Li, XQ; Yanga, DR,期刊:Applied Physics Letters, 页码:139901-139901 , 文章类型: Correction,,卷期:2010年97-13]
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- Negative permittivity and left-handed behavior of doped manganites in millimeter waveband
[作者:Khodzitsky, MK; Tarapov, SI; Belozorov, DP; Pogorily, AM; Tovstolytkin, AI; Belous, AG; Solopan, SA,期刊:Applied Physics Letters, 页码:131912-131912 , 文章类型: Article,,卷期:2010年97-13]
- The "effective plasma frequency" of strontium-doped lanthanum manganite was determined basing on its double negative properties. The zone of high transmission (double negative zone) for spatially partitioned layered mang...
- Reduction of nonradiative recombination center for ZnO films grown under Zn-rich conditions by metal organic chemical vapor deposition
[作者:Fujimoto, E; Watanabe, K; Matsumoto, Y; Koinuma, H; Sumiya, M,期刊:Applied Physics Letters, 页码:131913-131913 , 文章类型: Article,,卷期:2010年97-13]
- ZnO films were grown by metalorganic chemical vapor deposition using the repeated temperature modulation in an H-2 ambient. The crystalline quality, as defined by the full-width at half-maximum of the omega (10 (1) over ...
- Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas
[作者:Sonde, S; Giannazzo, F; Vecchio, C; Yakimova, R; Rimini, E; Raineri, V,期刊:Applied Physics Letters, 页码:132101-132101 , 文章类型: Article,,卷期:2010年97-13]
- The electron mean free path (l(gr)) is "locally" evaluated by scanning capacitance spectroscopy on graphene obtained with different preparation methods and on different substrates, i.e., graphene exfoliated from highly o...
- Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
[作者:Hoshii, T; Yokoyama, M; Yamada, H; Hata, M; Yasuda, T; Takenaka, M; Takagi, S,期刊:Applied Physics Letters, 页码:132102-132102 , 文章类型: Article,,卷期:2010年97-13]
- We perform InGaAs surface nitridation using electron cyclotron resonance (ECR) plasma and study the effect on interface properties of ECR-sputtered SiO2/InGaAs metal-oxide-semiconductor (MOS) capacitors. We demonstrate t...
- Thermoelectric properties of electrostatically tunable antidot lattices
[作者:Goswami, S; Siegert, C; Shamim, S; Pepper, M; Farrer, I; Ritchie, DA; Ghosh, A,期刊:Applied Physics Letters, 页码:132104-132104 , 文章类型: Article,,卷期:2010年97-13]
- We report on the fabrication and characterization of a device which allows the formation of an antidot lattice (ADL) using only electrostatic gating. The antidot potential and Fermi energy of the system can be tuned inde...
- Tunnel barrier parameters derivation from normalized differential conductance in Hg/organic monomolecular layer-Si junctions
[作者:Godet, C; Fadjie-Djomkam, AB; Ababou-Girard, S; Solal, F,期刊:Applied Physics Letters, 页码:132105-132105 , 文章类型: Article,,卷期:2010年97-13]
- The shape of tunnel barrier junctions is derived from experimental current density versus bias, J(V), using the normalized differential conductance, NDC=d log J/d log V, to discriminate barrier height, Phi(T), and barrie...
- Effect of O-2 adsorption on electron scattering at Cu(001) surfaces
[作者:Chawla, JS; Zahid, F; Guo, H; Gall, D,期刊:Applied Physics Letters, 页码:132106-132106 , 文章类型: Article,,卷期:2010年97-13]
- The electrical resistance of epitaxial Cu(001) sequentially increases, decreases, and again increases when exposed to 10(-3)-10(5) Pa s of O-2. This is attributed to partial specular surface scattering for smooth clean C...
- Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation
[作者:Choi, BJ; Choi, S; Eom, T; Rha, SH; Kim, KM; Hwang, CS,期刊:Applied Physics Letters, 页码:132107-132107 , 文章类型: Article,,卷期:2010年97-13]
- A phase change memory cell was fabricated by stacking plasma-enhanced cyclic chemical-vapor-deposited Ge2Sb2Te5 (GST) and atomic layer deposited TiO2 thin films. Different pairs of resistance states were obtained by cont...
- Nanoscale resistive switching and filamentary conduction in NiO thin films
[作者:Ye, JY; Li, YQ; Gao, J; Peng, HY; Wu, SX; Wu, T,期刊:Applied Physics Letters, 页码:132108-132108 , 文章类型: Article,,卷期:2010年97-13]
- We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching...
- Lateral, high-quality, metal-catalyzed semiconductor growth on amorphous and lattice-mismatched substrates for photovoltaics
[作者:Quitoriano, NJ,期刊:Applied Physics Letters, 页码:132110-132110 , 文章类型: Article,,卷期:2010年97-13]
- Solar-derived energy is universally available but is not yet cost-competitive. Next generation solar cells are expected to have high efficiencies, associated with single-crystalline semiconductors, at reduced costs, asso...
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