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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共115条记录   Strongly correlated nu(tot)=1 state in an intrinsically density-matched electron bilayer system and its two-terminal resistance [作者：Schmult, S; Tiemann, L; Dietsche, W; von Klitzing, K,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] Utilizing an intrinsically density-matched double quantum well system, a two-terminal resistance of the strongly correlated total filling factor one (nu(tot)=1) state measuring h/e(2) is determined. In contrast to conven... Highly stacked InGaAs quantum dot structures grown with two species of As [作者：Sugaya, T; Amano, T; Mori, M; Niki, S,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The authors describe successful formation of highly stacked InGaAs quantum dot (QD) structures grown with molecular beam epitaxy. 100-stack InGaAs QDs are grown without using any strain compensation technique or any degr... High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth [作者：Qian, XF; Vangala, S; Wasserman, D; Goodhue, WD,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] Optically active, highly uniform, cylindrical InGaAs quantum dot (QD) arrays have been fabricated using nanosphere lithography combined with Bromine ion-beam-assisted etching and molecular beam epitaxy (MBE)-assisted GaA... Measurement of the Casimir effect under ultrahigh vacuum: Calibration method [作者：Torricelli, G; Thornton, S; Binns, C; Pirozhenko, I; Lambrecht, A,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Article，,卷期：2010年28-3] In this article, the authors present a strategy to measure the Casimir effect with an atomic force microscopy in an ultrahigh vacuum system. The key parameters including the absolute distance, the contact potential diffe... Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 [作者：Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J,期刊：Journal Of Vacuum Science & Technology B, 页码：648-648 , 文章类型： Proceedings Paper，,卷期：2010年28-3] In0.2Ga0.8As was effectively passivated using in situ molecular beam epitaxy deposited Al2O3/HfO2 and HfO2-Al2O3(HfAlO)/HfO2. HfO2 3 ML (monolayer) thick was epitaxially grown on InGaAs, as monitored by reflection high-e... Fabrication of complex three-dimensional nanostructures using focused ion beam and nanomanipulation [作者：Jeon, J; Floresca, HC; Kim, MJ,期刊：Journal Of Vacuum Science & Technology B, 页码：549-553 , 文章类型： Article，,卷期：2010年28-3] In this article, the authors present a fabrication/assembly method that grants the ability to create complex three-dimensional (3D) nanostructures. This method uses a combination of micro- and nanomachining capabilities ... Visualizing contact line phenomena on microstructured superhydrophobic surfaces [作者：Cannon, AH; King, WP,期刊：Journal Of Vacuum Science & Technology B, 页码：L21-L24 , 文章类型： Article，,卷期：2010年28-3] The authors introduce a direct method for determining droplet solid-liquid-vapor interfacial geometry on microstructured surfaces. A heated liquid metal droplet of size 18 mu l is deposited onto a microstructured surface... Development of ion sources from ionic liquids for microfabrication [作者：Perez-Martinez, C; Guilet, S; Gogneau, N; Jegou, P; Gierak, J; Lozano, P,期刊：Journal Of Vacuum Science & Technology B, 页码：L25-L27 , 文章类型： Article，,卷期：2010年28-3] In this article the authors present the potential of ionic liquid ion sources (ILISs) for direct microfabrication of silicon structures. The authors have developed a specific source geometry using the ionic liquid EMI-BF... Method to obtain nonuniformity information from field emission behavior [作者：Dall'Agnol, FF; de Paulo, AC; Paredez, P; den Engelsen, D; Santos, TEA; Mammana, VP,期刊：Journal Of Vacuum Science & Technology B, 页码：441-449 , 文章类型： Article，,卷期：2010年28-3] This article describes the characterization of field emission from a planar cathode to a spherical anode with the approach curve method (ACM). In such a diode configuration the electric field strength at the cathode surf... Effect of energetic ions on plasma damage of porous SiCOH low-k materials [作者：Kunnen, E; Baklanov, MR; Franquet, A; Shamiryan, D; Rakhimova, TV; Urbanowicz, AM; Struyf, H; Boullart, W,期刊：Journal Of Vacuum Science & Technology B, 页码：450-459 , 文章类型： Article，,卷期：2010年28-3] Plasma damage of SiCOH low-k films in an oxygen plasma is studied using a transformer coupled plasma reactor. The concentration of oxygen atoms and O-2(+) ions is varied by using three different conditions: (1) bottom po... Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-film transistors [作者：Mao, LF,期刊：Journal Of Vacuum Science & Technology B, 页码：460-465 , 文章类型： Article，,卷期：2010年28-3] The size of silicon grain in silicon thin-film transistors (TFTs) and the dependence of the gate-leakage current have been theoretically investigated after the effect of the silicon-grain size on the surface potential is... n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties [作者：Gullu, O; Turut, A,期刊：Journal Of Vacuum Science & Technology B, 页码：466-472 , 文章类型： Article，,卷期：2010年28-3] The rectifying junction characteristics of methyl red (MR) organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film ... Effects of AlxGa1-xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition [作者：Lin, KL; Chang, EY; Hsiao, YL; Huang, WC; Luong, TT; Wong, YY; Li, TK; Tweet, D; Chiang, CH,期刊：Journal Of Vacuum Science & Technology B, 页码：473-477 , 文章类型： Article，,卷期：2010年28-3] GaN film grown on Si substrate using multilayer AlN/AlxGa1-xN buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The AlxGa1-xN films with Al composition varying from 1 to 0.66 were used... Mn-induced growth of InAs nanowires [作者：Jabeen, F; Piccin, M; Felisari, L; Grillo, V; Bais, G; Rubini, S; Martelli, F; d'Acapito, F; Rovezzi, M; Boscherini, F,期刊：Journal Of Vacuum Science & Technology B, 页码：478-483 , 文章类型： Article，,卷期：2010年28-3] InAs nanowires have been grown by molecular beam epitaxy using Mn as growth catalyst. Nanowires (NWs) have been obtained on SiO2 and oxidized GaAs for growth temperatures in the range of 370-410 degrees C. The growth tem... Direct transfer of gold nanoislands from a MoS2 stamp to a Si-H surface [作者：Deng, J; Troadec, C; Hui, HK; Joachim, C,期刊：Journal Of Vacuum Science & Technology B, 页码：484-489 , 文章类型： Article，,卷期：2010年28-3] A printing technique is proposed for the transfer of metallic nanoislands between two semiconductor surfaces in UHV. For the preparation of the stamp, a systematic study of the growth conditions of small, flat triangular... Cathodoluminescent properties of nanocrystalline Lu3Ga5O12:Tb3+ phosphor for field emission display application [作者：Xu, XG; Chen, J; Deng, SZ; Xu, NS; Lin, J,期刊：Journal Of Vacuum Science & Technology B, 页码：490-494 , 文章类型： Proceedings Paper，,卷期：2010年28-3] The cathodoluminescent properties of nanocrystalline Lu3Ga5O12:Tb3+ phosphor films were investigated. Phosphor films were prepared on indium tin oxide coated glass by a screen printing method. The Lu3Ga5O12:Tb3+ phosphor...