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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共107条记录   Thick membrane operated rf microelectromechanical system switch with low actuation voltage [作者：Kim, J; Kwon, S; Hong, Y; Jeong, H; Song, I; Ju, B,期刊：Journal Of Vacuum Science & Technology B, 页码：1-5 , 文章类型： Article，,卷期：2009年27-1] Most researcher who have studied the radio frequency (rf) microelectromechanical system (MEMS) switch has focused on the electrostatic actuation types switch because of this type's low power consumption, simple fabricati... Duplication of nanoimprint templates by a novel SU-8/SiO2/PMMA trilayer technique [作者：Wan, J; Shu, Z; Deng, SR; Xie, SQ; Lu, BR; Liu, R; Chen, YF; Qu, XP,期刊：Journal Of Vacuum Science & Technology B, 页码：19-22 , 文章类型： Article，,卷期：2009年27-1] In this work, a trilayer technique used in the nanoimprint lithography process to replicate the templates is developed. The SU8/SiO2/PMMA trilayer was used. The photosensitive epoxy (SU8 resist) which has a low glass tra... A silicon-germanium W-structure photodiode for near-infrared detection [作者：Ali, D; Thompson, P; DiPasquale, J; Richardson, CJK,期刊：Journal Of Vacuum Science & Technology B, 页码：23-27 , 文章类型： Article，,卷期：2009年27-1] The authors report on the design, characterization, and performance of silicon-rich SiGe waveguide photodetectors grown directly on silicon without virtual buffer relaxation layers. The type-II band offsets of the SiGe s... Dependence of etch rates of silicon substrates on the use of C4F8 and C4F6 plasmas in the deposition step of the Bosch process [作者：Rhee, H; Lee, HM; Namkoung, YM; Kim, CK; Chae, H; Kim, YW,期刊：Journal Of Vacuum Science & Technology B, 页码：33-40 , 文章类型： Article，,卷期：2009年27-1] The Bosch process was carried out using SF6/C4F8 or SF6/C4F6 plasmas during the etching/deposition steps to examine the etch profiles and etch rates of silicon. The fluorocarbon film deposited in a CA plasma was thicker ... Mitigation of microloading effect in nanoimprint mask fabrication [作者：Murali, R,期刊：Journal Of Vacuum Science & Technology B, 页码：167-168 , 文章类型： Article，,卷期：2009年27-1] The impact of microloading on photomask etch has been widely studied in the last decade; microloading results in differing etch depths for different pattern resolution and densities. Techniques used to reduce microloadin... Stable tungsten disilicide contacts for surface and thin film resistivity measurements [作者：Jnawali, G; Heringdorf, FJMZ; Wall, D; Sindermann, S; Hoegen, MHV,期刊：Journal Of Vacuum Science & Technology B, 页码：180-183 , 文章类型： Article，,卷期：2009年27-1] High-temperature stable electric contacts of tungsten disilicide (WSi2) on Si(001) are fabricated by a simple two-step process: vacuum deposition of W on the native Si dioxide and subsequent annealing under ultrahigh-vac... Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure [作者：Matsumoto, M; Inayoshi, Y; Murashige, S; Suemitsu, M; Nakajima, S; Uehara, T; Toyoshima, Y,期刊：Journal Of Vacuum Science & Technology B, 页码：223-225 , 文章类型： Article，,卷期：2009年27-1] Ammonia-free deposition of silicon nitride (SiNX) films have been achieved on Si(100) substrate at low temperature (200 degrees C) by using plasma enhanced chemical vapor deposition. operated at near atmospheric pressure... Behavior of zirconium oxide films processed from novel monocyclopentadienyl precursors by atomic layer deposition [作者：Kukli, K; Niinisto, J; Tamm, A; Ritala, M; Leskela, M,期刊：Journal Of Vacuum Science & Technology B, 页码：226-229 , 文章类型： Article，,卷期：2009年27-1] ZrO2 thin films were grown by atomic layer deposition from new cyclopentadienyl precursors on planar TiN and SiO2/Si substrates, as well as on silicon having deep trenches with aspect ratio of 1:60. The films demonstrate... Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices [作者：Mroczynski, R; Beck, RB,期刊：Journal Of Vacuum Science & Technology B, 页码：494-497 , 文章类型： Article，,卷期：2009年27-1] In this paper, the authors present the new double gate dielectric structure for the nonvolatile semiconductor memory (NVSM) devices which is based of hafnium dioxide (HfO2). The novelty of this structure relays on the in... Ferroelectric nanostructures [作者：Vrejoiu, I; Alexe, M; Hesse, D; Gosele, U,期刊：Journal Of Vacuum Science & Technology B, 页码：498-503 , 文章类型： Article，,卷期：2009年27-1] Device miniaturization poses not only technological and manufacturing challenges, it also requires the understanding of the phenomena occurring at nanoscale in condensed matter and at the involved interfaces. Herein, the... Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications [作者：Henkel, K; Lazareva, I; Mandal, D; Paloumpa, I; Muller, K; Koval, Y; Muller, P; Schmeisser, D,期刊：Journal Of Vacuum Science & Technology B, 页码：504-507 , 文章类型： Article，,卷期：2009年27-1] Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is a ferroelectric polymer and a candidate for the application in a ferroelectric field effect transistor, which is considered as a nonvolatile and nondestructive... Field-emission properties of carbon nanotubes grown using Cu-Cr catalysts [作者：Zhang, ZJ; Chua, DHC; Gao, Y; Zhang, YP; Tang, Z; Tay, BK; Feng, T; Sun, Z; Chen, YW,期刊：Journal Of Vacuum Science & Technology B, 页码：41-46 , 文章类型： Article，,卷期：2009年27-1] In addition to Ni, Co, and Fe, the authors show that a copper (Cu) chromium (Cr) alloy can be a good catalyst for controlled growth of carbon nanotubes (CNTs). A thermal chemical vapor deposition was used at 600 degrees ... Absorber stack with transparent conductive oxide layer for extreme ultraviolet lithography [作者：Kang, HY; Hwangbo, CK,期刊：Journal Of Vacuum Science & Technology B, 页码：58-60 , 文章类型： Article，,卷期：2009年27-1] In this study, the authors propose transparent conductive oxide layer as a new absorber for extreme ultraviolet lithography mask. The optical constant of indium tin oxide (ITO) at 13.5 nm is calculated and the extinction... Ti0.94Fe0.06O2/Ti0.94Mn0.06O2 superlattice films deposited on atomic-scale flattened sapphire substrates for dilute magnetic semiconductor applications [作者：Seong, NJ; Jiang, J; Yoon, SG,期刊：Journal Of Vacuum Science & Technology B, 页码：81-84 , 文章类型： Article，,卷期：2009年27-1] 20-nm-thick Ti0.94Fe0.O-06(2)/Tt(0.94)Mn(0.06)O(2) (TFO/TMO) superlattice films, where each alternating layer is about 0.27 nm thick, were prepared at 500 degrees C by pulsed-laser deposition on (1 (1) over bar 02)-sapph... Band bending and adsorption/desorption kinetics on N-polar GaN surfaces [作者：Choi, S; Kim, TH; Wu, P; Brown, A; Everitt, HO; Losurdo, M; Bruno, G,期刊：Journal Of Vacuum Science & Technology B, 页码：107-112 , 文章类型： Article，,卷期：2009年27-1] Highly reactive N-polar [000-1] GaN surfaces were analyzed using spectroscopic ellipsometry. Following exposure to air, observed changes in the pseudodielectric function near the GaN band edge indicate that surface conta... Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors [作者：Lim, W; Jang, JH; Kim, SH; Norton, DP; Craciun, V; Pearton, SJ; Ren, F; Chen, H,期刊：Journal Of Vacuum Science & Technology B, 页码：126-129 , 文章类型： Article，,卷期：2009年27-1] The performance of amorphous InGaZnO4 thin film transistors with three different gate dielectrics (SiO2, SiON, and SiNx) is reported. The gate dielectric films were prepared by plasma enhanced chemical vapor deposition w...