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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共180条记录   CsBr/GaN heterojunction photoelectron source [作者：Maldonado, JR; Liu, Z; Sun, Y; Schuetter, S; Pianetta, P; Pease, RFW,期刊：Journal Of Vacuum Science & Technology B, 页码：2266-2270 , 文章类型： Article，,卷期：2007年25-6] Experimental results on a new CsBr/GaN heterojunction photocathode structure are presented. The results indicate a fourfold improvement in photoyield relative to CsBr/Cr photocathodes. A model is presented based on intra... Subwavelength proximity nanolithography using a plasmonic lens [作者：Seo, S; Kim, HC; Ko, H; Cheng, M,期刊：Journal Of Vacuum Science & Technology B, 页码：2271-2276 , 文章类型： Article，,卷期：2007年25-6] This article presents a novel device, the plasmonic lens (PL), consisting of equally spaced ring apertures in a metal film deposited on a fused silica substrate. It was fabricated by electron-beam lithography (EBL) and r... Improved release strategy for UV nanoimprint lithography [作者：Garidel, S; Zelsmann, M; Chaix, N; Voisin, P; Boussey, J; Beaurain, A; Pelissier, B,期刊：Journal Of Vacuum Science & Technology B, 页码：2430-2434 , 文章类型： Article，,卷期：2007年25-6] The adhesion between the fused silica mold and the resist remains a key issue in ultraviolet nanoimprint lithography (UV-NIL), especially in step and repeat processes. In this paper, we present results on antisticking la... Viscosity measurement of nanoimprint lithography resists with a rheological nanoindenter [作者：Svintsov, AA; Trofimov, OV; Zaitsev, SI,期刊：Journal Of Vacuum Science & Technology B, 页码：2435-2438 , 文章类型： Article，,卷期：2007年25-6] Considering Navier-Stokes equation, penetration of a tip in viscous film was considered allowing acquisition of viscosity from experimental data. Viscosity of thin (< 500 nm) films as a function of temperature in the ran... Phase control in multiexposure spatial frequency multiplication [作者：Zhao, Y; Chang, CH; Heilmann, RK; Schattenburg, ML,期刊：Journal Of Vacuum Science & Technology B, 页码：2439-2443 , 文章类型： Article，,卷期：2007年25-6] Multiexposure spatial frequency multiplication is a technique that allows the spatial frequency of grating patterns to be increased by integer factors 2,3,4,... by applying a nonlinear development process between pattern... Evolution of surface morphology of GaN thin films during photoelectrochemical etching [作者：Leach, JH; Ozgur, U; Morkoc, H,期刊：Journal Of Vacuum Science & Technology B, 页码：1832-1835 , 文章类型： Article，,卷期：2007年25-6] The evolution of the surface morphology of unintentionally doped and Si-doped GaN samples subjected to photoelectrochemical (PEC) etching in the carrier-limited regime in aqueous KOH is reported. It was found that a nano... C-doped semi-insulating GaNHFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance [作者：Choi, YC; Shi, J; Pophristic, M; Spencer, MG; Eastman, LF,期刊：Journal Of Vacuum Science & Technology B, 页码：1836-1841 , 文章类型： Article，,卷期：2007年25-6] High breakdown voltage (BV) AlGaN/GaN heterojunction field effect transistors (HFETs) with a low specific on-resistance (AR(DS(on))) were successfully fabricated using intentionally C-doped semi-insulating GaN buffers wi... Large-scale growth of single-walled carbon nanotubes using cold-wall chemical vapor deposition [作者：Shin, KY; Lee, CT; Kao, JS; Kei, CC; Chang, CM; Hsiao, CN; Liang, JH; Leou, KC; Tsai, CH,期刊：Journal Of Vacuum Science & Technology B, 页码：1842-1846 , 文章类型： Article，,卷期：2007年25-6] Carbon nanotubes have been considered as an alternative material for next generation nanoelectronic devices, such as the carbon nanotube field-effect transistor (CNT-FET) or nanosensor. Large-scale growth of single-walle... Real-time spatial-phase locking for vector-scan electron beam lithography [作者：Yang, Y; Hastings, JT,期刊：Journal Of Vacuum Science & Technology B, 页码：2072-2076 , 文章类型： Article，,卷期：2007年25-6] Spatial-phase locked electron beam lithography (SPLEBL) provides feedback control of electron beam position by monitoring the signal from a fiducial grid on the substrate. Continuous, or "real-time," spatial-phase lockin... Metal-semiconductor-metal electron detectors [作者：Aldana, R; Pease, RF,期刊：Journal Of Vacuum Science & Technology B, 页码：2077-2080 , 文章类型： Article，,卷期：2007年25-6] Metal-semiconductor-metal (MSM) junctions are a standard photon detector for high-speed applications due to fast response time (subpicosecond) and long device lifetime, high gain (QE>100%), small device area, and reduced... Nanometer-scale gaps in hydrogen silsesquioxane resist for T-gate fabrication [作者：Jin, N; Choi, S; Wang, L; Chen, G; Kim, D; Kumar, V; Adesida, I,期刊：Journal Of Vacuum Science & Technology B, 页码：2081-2084 , 文章类型： Article，,卷期：2007年25-6] The authors present a novel T-gate fabrication process which takes advantage of the unique high-resolution property of the low-k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist... Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication [作者：Choi, S; Jin, N; Kumar, V; Adesida, I; Shannon, M,期刊：Journal Of Vacuum Science & Technology B, 页码：2085-2088 , 文章类型： Article，,卷期：2007年25-6] The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased... Monolithic multichannel secondary electron detector for distributed axis electron beam lithography and inspection [作者：Pickard, DS; Kenney, C; Tanimoto, S; Crane, T; Groves, T; Pease, RFW,期刊：Journal Of Vacuum Science & Technology B, 页码：2277-2283 , 文章类型： Article，,卷期：2007年25-6] The attractiveness of electron beam systems would be greatly enhanced if the throughput could be improved. One approach, described previously by the authors employs a uniform axial magnetic field to focus thousands of el... Dissolution characteristics and reaction kinetics of molecular resists for extreme-ultraviolet lithography [作者：Toriumi, M; Santillan, J; Itani, T; Kozawa, T; Tagawa, S,期刊：Journal Of Vacuum Science & Technology B, 页码：2486-2489 , 文章类型： Article，,卷期：2007年25-6] Molecular resist of polyphenol was evaluated as an extreme-ultraviolet resist compared with a polymer resist of p(tert-butoxycarbonyl-hydroxystyrene). The molecular resist shows higher sensitivity than the polymer resist... Are extreme ultraviolet resists ready for the 32 nm node? [作者：Petrillo, K; Wei, Y; Brainard, R; Denbeaux, G; Goldfarb, D; Koay, CS; Mackey, J; Montgomery, W; Pierson, W; Wallow, T; Wood, O,期刊：Journal Of Vacuum Science & Technology B, 页码：2490-2495 , 文章类型： Article，,卷期：2007年25-6] The International Technology Roadmap for Semiconductors (ITRS) insertion point of extreme ultraviolet (EUV) lithography is the 32 nm half-pitch node, and significant worldwide effort is being focused toward this goal. Po... Measurements of acid generation by extreme ultraviolet irradiation in lithographic films [作者：Glodde, M; Goldfarb, DL; Medeiros, DR; Wallraff, GM; Denbeaux, GP,期刊：Journal Of Vacuum Science & Technology B, 页码：2496-2503 , 文章类型： Article，,卷期：2007年25-6] Extreme ultraviolet (EUV) lithography requires photoresist materials that incorporate highly efficient photoacid generators (PAGs) due to the low intensity of the currently available EUV light sources. It is therefore ne...