- Advanced carrier depth profiling on Si and Ge with micro four-point probe
[作者:Clarysse, T; Eyben, P; Parmentier, B; Van Daele, B; Satta, A; Vandervorst, W; Lin, R; Petersen, DH; Nielsen, PF,期刊:Journal Of Vacuum Science & Technology B, 页码:317-321 , 文章类型: Article,,卷期:2008年26-1]
- In order to reach the ITRS goals for future complementary metal-oxide semiconductor technologies, there is a growing need for the accurate extraction of ultrashallow electrically active dopant (carrier) profiles. In this...
- Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions
[作者:Petersen, DH; Lin, R; Hansen, TM; Rosseel, E; Vandervorst, W; Markvardsen, C; Kjaer, D; Nielsen, PF,期刊:Journal Of Vacuum Science & Technology B, 页码:362-367 , 文章类型: Article,,卷期:2008年26-1]
- In this comparative study, the authors demonstrate the relationship/correlation between macroscopic and microscopic four-point sheet resistance measurements on laser annealed ultra-shallow junctions (USJs). Microfabricat...
- Boron cathodic arc as an ion source for shallow junction ion implantation of boron
[作者:Williamsa, JM; Klepper, CC; Chivers, DJ; Hazelton, RC; Moschella, JJ,期刊:Journal Of Vacuum Science & Technology B, 页码:368-372 , 文章类型: Article,,卷期:2008年26-1]
- For the last ten years, one of the most important topics in the literature for ion implantation of semiconductors has concerned delivery of boron ions at low energies for the 65, 45, and 32 nm technologies and beyond. Th...
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