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文章名     作者     期刊名     摘要     卷     期         如果没有找到您所需要的文献，请点击 ——此处申请     共110条记录   Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots [作者：He, J; Bao, F; Zhang, JP,期刊：Applied Physics Letters, 页码：171914-171914 , 文章类型： Article，,卷期：2012年100-17] We systematically study the influence of group V intermixing on the structural and optical properties of type II GaSb/GaAs quantum dots (QDs) capped by selected capping layers. Compared to GaSb QDs capped directly by a G... High-efficiency acousto-optical interaction in phoxonic nanobeam waveguide [作者：Hsiao, FL; Hsieh, CY; Hsieh, HY; Chiu, CC,期刊：Applied Physics Letters, 页码：171103-171103 , 文章类型： Article，,卷期：2012年100-17] We demonstrate the simultaneous existence of slow photonic and phononic modes in phoxonic nanobeam. The phoxonic nanobeam is formed by arranging air semi-cylinders along lateral sides of a suspended silicon waveguide. Be... Stress relaxation and critical thickness for misfit dislocation formation in (10(1)over-bar0) and (30(31)over-bar) InGaN/GaN heteroepitaxy [作者：Hsu, PS; Hardy, MT; Young, EC; Romanov, AE; DenBaars, SP; Nakamura, S; Speck, JS,期刊：Applied Physics Letters, 页码：171917-171917 , 文章类型： Article，,卷期：2012年100-17] Cathodoluminescence imaging was used to study the onset of plastic relaxation and critical thickness for misfit dislocation (MD) formation by basal plane (BP) or nonbasal plane (NBP) slip in In0.09Ga0.91N/GaN heterostruc... Gold nanoring as a sensitive plasmonic biosensor for on-chip DNA detection [作者：Huang, CJ; Ye, J; Wang, S; Stakenborg, T; Lagae, L,期刊：Applied Physics Letters, 页码：173114-173114 , 文章类型： Article，,卷期：2012年100-17] We report an on-chip nanosensor based on the localized surface plasmon resonance (LSPR) property of gold nanorings. The fabricated nanorings using nanosphere lithography showed highly tunable optical properties and were ... Observation of UV-induced Auger features in catechol adsorbed on anatase TiO2 (101) single crystal surface [作者：Thomas, AG; Syres, KL,期刊：Applied Physics Letters, 页码：171603-171603 , 文章类型： Article，,卷期：2012年100-17] We have investigated the electronic structure of catechol adsorbed on the anatase TiO2 (101) surface under illumination with ultraviolet (UV) light (4.75 eV) using resonant photoemission spectroscopy. UV illumination res... Apparent Raman spectral shifts from nano-structured surfaces [作者：Tishkova, V; Bacsa, WS,期刊：Applied Physics Letters, 页码：173105-173105 , 文章类型： Article，,卷期：2012年100-17] We observe Raman spectral shifts when scanning the focal spot over trenches in gallium arsenide. The Raman spectral shifts induced by topography are only present when the trenches are parallel to the spectrometer grating... Investigation of perpendicular magnetic anisotropy of CoFeB by x-ray magnetic circular dichroism [作者：Tsai, WC; Liao, SC; Hou, HC; Yen, CT; Wang, YH; Tsai, HM; Chang, FH; Lin, HJ; Lai, CH,期刊：Applied Physics Letters, 页码：172414-172414 , 文章类型： Article，,卷期：2012年100-17] We have studied the variation of perpendicular magnetic anisotropy (PMA) of CoFeB layers with the oxidation degree of the MgO buffer layers. After annealing at 330 degrees C, the out-of-plane anisotropy field (H-k) of 1.... A nanoimprinted, optically tuneable organic laser [作者：Wallikewitz, BH; Nikiforov, GO; Sirringhaus, H; Friend, RH,期刊：Applied Physics Letters, 页码：173301-173301 , 文章类型： Article，,卷期：2012年100-17] We present a means to optically tune the emission of an organic laser reversibly over a range of 14 nm. This is enabled by incorporating a photochromic spiropyran (10,30-dihydro-10,30, 30-trimethyl-6-nitrospiro[2H-1-benz... Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC [作者：Wang, H; Wu, F; Byrappa, S; Sun, S; Raghothamachar, B; Dudley, M; Sanchez, EK; Hansen, D; Drachev, R; Mueller, SG; Loboda, MJ,期刊：Applied Physics Letters, 页码：172105-172105 , 文章类型： Article，,卷期：2012年100-17] Synchrotron white beam x-ray topography (SWBXT) observations are reported of single-ended Frank-Read sources in 4H-SiC. These result from inter-conversion between basal plane dislocations (BPDs) and threading edge disloc... N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers [作者：Wang, PH; Liu, B; Shen, Y; Zheng, Y; McCarthy, MA; Holloway, P; Rinzler, AG,期刊：Applied Physics Letters, 页码：173514-173514 , 文章类型： Article，,卷期：2012年100-17] N-channel carbon nanotube enabled vertical field effect transistors (CN-VFETs) exploiting a solution deposited ZnO nanoparticle thin film as the channel material are demonstrated. Transistor performance benefits from a t... High-pressure electrical transport properties of KNbO3: Experimental and theoretical approaches [作者：Wang, QL; Han, YH; Liu, CL; Ma, YZ; Ren, WB; Gao, CX,期刊：Applied Physics Letters, 页码：172905-172905 , 文章类型： Article，,卷期：2012年100-17] Pressure-induced electrical transport properties of KNbO3 including resistance, relaxation frequency, and relative permittivity have been investigated under pressure up to 30.6 GPa by in situ impedance spectroscopy measu... Direct evidence of current blocking by ZnSe in Cu2ZnSnSe4 solar cells [作者：Watjen, JT; Engman, J; Edoff, M; Platzer-Bjorkman, C,期刊：Applied Physics Letters, 页码：173510-173510 , 文章类型： Article，,卷期：2012年100-17] Thin films of polycrystalline Cu2ZnSnSe4 were made by selenization of co-sputtered metallic precursors and processed to solar cells. Electron beam induced current (EBIC) in combination with microscopic scale IV character... Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28 [作者：Weis, CD; Lo, CC; Lang, V; Tyryshkin, AM; George, RE; Yu, KM; Bokor, J; Lyon, SA; Morton, JJL; Schenkel, T,期刊：Applied Physics Letters, 页码：172104-172104 , 文章类型： Article，,卷期：2012年100-17] We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diff... Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction (vol 98, 261907, 2011) [作者：Wolz, M; Kaganer, VM; Brandt, O; Geelhaar, L; Riechert, H,期刊：Applied Physics Letters, 页码：179902-179902 , 文章类型： Correction，,卷期：2012年100-17] Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces [作者：Wolf, H; Kronenberg, J; Wagner, F; Deicher, M; Wichert, T,期刊：Applied Physics Letters, 页码：171915-171915 , 文章类型： Article，,卷期：2012年100-17] Metal layers deposited on the surface of the semiconductor CdTe effect a shift of the concentration profile of Ag dopants in CdTe by several 100 mu m during diffusion anneal at about 550 K. Radio-tracer experiments using... The investigation of the diffusion length of cathode materials in organic light emitting devices through impedance characteristics [作者：Wu, IW; Chuang, CL; Wang, PS; Tseng, WH; Wu, CI,期刊：Applied Physics Letters, 页码：173302-173302 , 文章类型： Article，,卷期：2012年100-17] A non-destructive method to measure the diffusion length of the cathode materials into the organic layers in organic light emitting diodes (OLEDs) is demonstrated. The measurement is based on a correlation between the tr...