- Structure and magnetic properties of ternary Tb-Fe-B nanoparticles and nanoflakes - art. no. 162510
[作者:Liu, RM; Yue, M; Liu, WQ; Zhang, DT; Zhang, JX; Guo, ZH; Li, W,期刊:Applied Physics Letters, 页码:62510-62510 , 文章类型: Article,,卷期:2011年99-16]
- The structure and magnetic properties were studied for the ternary Tb-Fe-B nanoparticles and nanoflakes prepared by surfactant-aid high energy ball milling and subsequent size-selection. For the nanoparticles, significan...
- Intercalation of metal islands and films at the interface of epitaxially grown graphene and Ru(0001) surfaces - art. no. 163107
[作者:Huang, L; Pan, Y; Pan, LD; Gao, M; Xu, WY; Que, YD; Zhou, HT; Wang, YL; Du, SX; Gao, HJ,期刊:Applied Physics Letters, 页码:63107-63107 , 文章类型: Article,,卷期:2011年99-16]
- We report on intercalation of seven kinds of metals-Pt, Pd, Ni, Co, Au, In, and Ce-at the interface between an epitaxially grown graphene layer and a Ru(0001) substrate. Atomic resolution scanning tunneling microscopy im...
- Number-of-layer discriminated graphene phonon softening and stiffening - art. no. 163109
[作者:Wang, Y; Yang, XX; Li, JW; Zhou, ZF; Zheng, WT; Sun, CQ,期刊:Applied Physics Letters, 页码:63109-63109 , 文章类型: Article,,卷期:2011年99-16]
- From the perspective of bond order-length-strength correlation and the local bond averaging approach, we have formulated the number-of-layer resolved Raman shifts of graphene, with quantification of the referential origi...
- Enhanced charge collection in confined bulk heterojunction organic solar cells - art. no. 163301
[作者:Allen, JE; Yager, KG; Hlaing, H; Nam, CY; Ocko, BM; Black, CT,期刊:Applied Physics Letters, 页码:63301-63301 , 文章类型: Article,,卷期:2011年99-16]
- Confining blended poly(3-hexylthiophene) and [6,6]-phenyl-C-61-butyric acid methyl ester organic solar cell active layers within nanometer-scale cylindrical pores nearly double the supported short-circuit photocurrent de...
- Evidence for non-isotropic emitter orientation in a red phosphorescent organic light-emitting diode and its implications for determining the emitter's radiative quantum efficiency - art. no. 163302
[作者:Schmidt, TD; Setz, DS; Flammich, M; Frischeisen, J; Michaelis, D; Krummacher, BC; Danz, N; Brutting, W,期刊:Applied Physics Letters, 页码:63302-63302 , 文章类型: Article,,卷期:2011年99-16]
- The efficiency of organic light-emitting diodes is limited as only a fraction of the consumed electrical power is converted into light that is finally extracted to air. Especially, the radiative quantum efficiency of the...
- High speed and high density organic electrochemical transistor arrays - art. no. 163304
[作者:Khodagholy, D; Gurfinkel, M; Stavrinidou, E; Leleux, P; Herve, T; Sanaur, S; Malliaras, GG,期刊:Applied Physics Letters, 页码:63304-63304 , 文章类型: Article,,卷期:2011年99-16]
- A generic lithographic process is presented that allows the fabrication of high density organic electrochemical transistor arrays meant to interface with aqueous electrolytes. The channels of the transistors, which were ...
- High performance polymer light-emitting diodes with N-type metal oxide/conjugated polyelectrolyte hybrid charge transport layers - art. no. 163305
[作者:Park, JS; Lee, BR; Jeong, E; Lee, HJ; Lee, JM; Kim, JS; Kim, JY; Woo, HY; Kim, SO; Song, MH,期刊:Applied Physics Letters, 页码:63305-63305 , 文章类型: Article,,卷期:2011年99-16]
- We present an interfacial engineering strategy employing n-type-metal-oxide/conjugated-polyelectrolyte (CPE) hybrid charge-transport layers for highly efficient polymer light-emitting diodes (PLEDs). The hybrid metal-oxi...
- Extension of the spectral responsivity of the photocurrent in solution-processed small molecule composite via a charge transfer excitation - art. no. 163306
[作者:Hernandez-Sosa, G; Tong, MH; Coates, NE; Valouch, S; Moses, D,期刊:Applied Physics Letters, 页码:63306-63306 , 文章类型: Article,,卷期:2011年99-16]
- Incorporating [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM) in solution-processed composites comprising the two small molecular semiconductors 9,10-Diphenylanthracene (DPA) and 5,6,11,12-tetraphenylnaphthacene (Rubr...
- Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures - art. no. 163502
[作者:O'Regan, TP; Hurley, PK,期刊:Applied Physics Letters, 页码:63502-63502 , 文章类型: Article,,卷期:2011年99-16]
- The capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor capacitors (MOSCAPs) is calculated in three cases. First, quantization is not considered, then quantization of the C-vall...
|