- II-VI heterostructures obtained by encapsulation of colloidal CdSe nanowires by molecular beam epitaxy deposition of ZnSe - art. no. 03C102
[作者:Liu, XY; Mintairov, AM; Herzog, J; Vietmeyer, F; Pimpinella, RE; Kuno, M; Merz, JL; Kosel, TH; Dobrowolska, M; Furdyna, JK,期刊:Journal Of Vacuum Science & Technology B, 页码:C3102-C3102 , 文章类型: Article,,卷期:2011年29-3]
- In this work, 10 and 20 nm diameter colloidal CdSe nanowires (NWs) have been successfully incorporated into ZnSe layers grown by molecular beam epitaxy on GaAs substrates. Atomic force microscopy and scanning electron mi...
- High power 1.25 mu m InAs quantum dot vertical external-cavity surface-emitting laser - art. no. 03C113
[作者:Albrecht, AR; Hains, CP; Rotter, TJ; Stintz, A; Malloy, KJ; Balakrishnan, G; Moloney, JV,期刊:Journal Of Vacuum Science & Technology B, 页码:C3113-C3113 , 文章类型: Article,,卷期:2011年29-3]
- The authors demonstrate InAs quantum dot (QD)-based optically pumped vertical external-cavity surface-emitting lasers grown by molecular beam epitaxy. Active region designs utilizing two different resonant periodic gain ...
- Growth and characterization of TbAs:GaAs nanocomposites - art. no. 03C114
[作者:Cassels, LE; Buehl, TE; Burke, PG; Palmstrom, CJ; Gossard, AC; Pernot, G; Shakouri, A; Haughn, CR; Doty, MF; Zide, JMO,期刊:Journal Of Vacuum Science & Technology B, 页码:C3114-C3114 , 文章类型: Article,,卷期:2011年29-3]
- Recently, there has been interest in semimetallic rare earth monopnictide nanoparticles epitaxially embedded in III-V semiconductors due to the drastic changes brought about in these materials' electrical and thermal pro...
- Electrical properties of Er-doped In0.53Ga0.47As - art. no. 03C117
[作者:Burke, PG; Lu, H; Rudawski, NG; Stemmer, S; Gossard, AC; Bahk, JH; Bowers, JE,期刊:Journal Of Vacuum Science & Technology B, 页码:C3117-C3117 , 文章类型: Article,,卷期:2011年29-3]
- The electrical properties of In0.53Ga0.47As thin films Er-doped to concentrations of 1.5 x 10(17)-7.2 x 10(20) cm(-3) grown by molecular beam epitaxy at 490 degrees C on (001) InP substrates were studied. Electrical cond...
- Molecular beam epitaxy of metamorphic InyGa1-yP solar cells on mixed anion GaAsxP1-x/GaAs graded buffers - art. no. 03C118
[作者:Tomasulo, S; Simon, J; Simmonds, PJ; Biagiotti, J; Lee, ML,期刊:Journal Of Vacuum Science & Technology B, 页码:C3118-C3118 , 文章类型: Article,,卷期:2011年29-3]
- The authors have grown metamorphic InyGa1-yP on optimized GaAsxP1-x/GaAs graded buffers via solid source molecular beam epitaxy (MBE) for multijunction solar cell applications. In this work, the authors show that a previ...
- Optical measurements of single CdTe self-assembled quantum dots grown on ZnTe/GaSb - art. no. 03C119
[作者:Pimpinella, RE; Mintairov, AM; Liu, X; Kosel, TH; Merz, JL; Furdyna, JK; Dobrowolska, M,期刊:Journal Of Vacuum Science & Technology B, 页码:C3119-C3119 , 文章类型: Article,,卷期:2011年29-3]
- The CdTe quantum dots (QDs) grown on a ZnTe epilayer deposited directly on a GaSb substrate are studied by transmission electron microscopy (TEM) and near-field scanning optical microscopy. High resolution TEM images sho...
- Effect of strain and confinement on the effective mass of holes in InSb quantum wells - art. no. 03C110
[作者:Gaspe, CK; Edirisooriya, M; Mishima, TD; Jayathilaka, PARD; Doezema, RE; Murphy, SQ; Santos, MB; Tung, LC; Wang, YJ,期刊:Journal Of Vacuum Science & Technology B, 页码:C3110-C3110 , 文章类型: Article,,卷期:2011年29-3]
- An experimental study of the hole effective mass was conducted in a series of five remotely doped InSb quantum wells under biaxial compressive strain. From cyclotron resonance measurements at 4.2 K, an increase in hole e...
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