- Thick benzocyclobutene etching using high density SF6/O-2 plasmas - art. no. 011019
[作者:Chen, QW; Zhang, DY; Tan, ZM; Wang, ZY; Liu, LT; Lu, JQ,期刊:Journal Of Vacuum Science & Technology B, 页码:11019-11019 , 文章类型: Article,,卷期:2011年29-1]
- Etching of thick nonphotosensitive benzocyclobutene (BCB) was investigated using a high density SF6/O-2 plasma with an inductively coupled plasma (ICP) etcher. The effects of SF6 concentration on etching characteristics,...
- Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si - art. no. 01A901
[作者:Gomez, A; Castan, H; Garcia, H; Duenas, S; Bailon, L; Campabadal, F; Rafi, JM; Zabala, M,期刊:Journal Of Vacuum Science & Technology B, 页码:A1901-A1901 , 文章类型: Article,,卷期:2011年29-1]
- In this work, the results of the electrical behavior of metal-insulator-semiconductor (MIS) structures using Al2O3, HfO2, and nanolaminated layers as gate insulators are reported. The MIS structures were deposited by ato...
- Trapping in GdSiO high-k films - art. no. 01A902
[作者:Rao, R; Simoncini, R; Gottlob, HDB; Schmidt, M; Irrera, F,期刊:Journal Of Vacuum Science & Technology B, 页码:A1902-A1902 , 文章类型: Article,,卷期:2011年29-1]
- In this article, the authors systematically characterized TiN/GdSiO/SiO2/Si metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage ...
- Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors - art. no. 01A903
[作者:Ozben, ED; Lopes, JMJ; Nichau, A; Luptak, R; Lenk, S; Besmehn, A; Bourdelle, KK; Zhao, QT; Schubert, J; Mantl, S,期刊:Journal Of Vacuum Science & Technology B, 页码:A1903-A1903 , 文章类型: Article,,卷期:2011年29-1]
- We demonstrate the integration of TbScO3, LaScO3, and LaLuO3 as alternative gate oxides for fully depleted silicon on insulator (SOI) and strained SOI metal-oxide-semiconductor field-effect transistors (MOSFETs) with equ...
- Effect of gate capping configurations and silicon-on-insulator thickness with external stresses on partially depleted metal-oxide-semiconductor field-effect transistors - art. no. 01A904
[作者:Chang, WT; Lin, JA; Wang, CC; Yeh, WK,期刊:Journal Of Vacuum Science & Technology B, 页码:A1904-A1904 , 文章类型: Article,,卷期:2011年29-1]
- Silicon nitride gate capping by contact etch-stop layer (CESL) was used in this study to induce high and low tensile and compressive stresses on 50-, 70-, and 90-nm-thick silicon-on-insulator (SOI) n-/p-metal-oxide-semic...
- Scalable nanoimprint patterning of thin graphitic oxide sheets and in situ reduction - art. no. 011023
[作者:Lee, YY; Chong, KSL; Goh, SH; Ng, AMH; Kunnavakkam, MV; Hee, CL; Xu, YP; Tantang, H; Su, CY; Li, LJ,期刊:Journal Of Vacuum Science & Technology B, 页码:11023-11023 , 文章类型: Article,,卷期:2011年29-1]
- This article presents a scalable technique to precisely deposit and pattern graphitic oxide (GO) flakes onto a SiO2/Si or glass substrate. A blanket coating of GO was first applied from a colloidal solution onto an amine...
- Poly-Si/TiN/Mo/HfO2 gate stack etching in high-density plasmas - art. no. 011024
[作者:Luere, O; Pargon, E; Vallier, L; Joubert, O,期刊:Journal Of Vacuum Science & Technology B, 页码:11024-11024 , 文章类型: Article,,卷期:2011年29-1]
- Plasma etching of thin Mo layer integrated in a poly-Si/TiN/Mo/HfO2 gate stack is investigated using various halogen based plasma chemistries. Preliminary studies of Mo film etching show that SF6/Ar, HBr/O-2, and Cl-2/O-...
- Traps and trapping phenomena and their implications on electrical behavior of high-k capacitor stacks - art. no. 01AA03
[作者:Paskaleva, A; Lemberger, M; Atanassova, E; Bauer, AJ,期刊:Journal Of Vacuum Science & Technology B, 页码:AA103-AA103 , 文章类型: Article,,卷期:2011年29-1]
- The traps and trapping phenomena and their implications on leakage currents, conduction mechanisms, and stress-induced leakage current in high-k dielectrics have been investigated. Various dielectrics (mostly multicompon...
- Characterization of damage induced by FIB etch and tungsten deposition in high aspect ratio vias - art. no. 011026
[作者:Drezner, Y; Fishman, D; Greenzweig, Y; Raveh, A,期刊:Journal Of Vacuum Science & Technology B, 页码:11026-11026 , 文章类型: Article,,卷期:2011年29-1]
- In this paper we studied three major issues that have challenged focused ion beam (FIB) circuit edit practices: via overetching, via composition which affects via resistance, and uniformity of via fill. These issues may ...
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