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  • Element-Specific Magnetic Hysteresis of Individual 18 nm Fe Nanocubes
    [作者:Kronast, F; Friedenberger, N; Ollefs, K; Gliga, S; Tati-Bismaths, L; Thies, R; Ney, A; Weber, R; Hassel, C; Romer, FM; Trunova, AV; Wirtz, C; Hertel, R; Durr, HA; Farle, M,期刊:Nano Letters, 页码:1710-1715 , 文章类型: Article,,卷期:2011年11-4]
  • Correlating the electronic structure and magnetic response with the Morphology and crystal structure of the same single ferromagnetic nanoparticle has been up to now an unresolved challenge. Here, we present measurements...
  • Optical Impedance Matching Using Coupled Plasmonic Nanoparticle Arrays
    [作者:Spinelli, P; Hebbink, M; de Waele, R; Black, L; Lenzmann, F; Polman, A,期刊:Nano Letters, 页码:1760-1765 , 文章类型: Article,,卷期:2011年11-4]
  • Silver nanoparticle arrays placed on top of a high-refractive index substrate enhance the coupling of light into the substrate over a broad spectral range. We perform a systematic numerical and experimental study of the ...
  • Patchy Multishell Segregation in Pd-Pt Alloy Nanoparticles
    [作者:Barcaro, G; Fortunelli, A; Polak, M; Rubinovich, L,期刊:Nano Letters, 页码:1766-1769 , 文章类型: Article,,卷期:2011年11-4]
  • Chemical ordering in face-centered-cubic-like PdPt nanoparticles consisting of 38-201 atoms is studied via density-functional calculations combined with a symmetry orbit approach. It is found that for larger particles in...
  • Electron Transport in Pure and Doped Hematite
    [作者:Liao, PL; Toroker, MC; Carter, EA,期刊:Nano Letters, 页码:1775-1781 , 文章类型: Article,,卷期:2011年11-4]
  • Hematite (alpha-Fe2O3) is a promising candidate for photoelectrochemical splitting of water. However, its intrinsically poor conductivity is a major drawback. Doping hematite to make it either p-type or n-type enhances i...
  • A Fully Tunable Single-Walled Carbon Nanotube Diode
    [作者:Liu, CH; Wu, CC; Zhong, ZH,期刊:Nano Letters, 页码:1782-1785 , 文章类型: Article,,卷期:2011年11-4]
  • We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube. The diode's turn on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages,...