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  • Polarization-engineered GaN/InGaN/GaN tunnel diodes
    [作者:Krishnamoorthy, S; Nath, DN; Akyol, F; Park, PS; Esposto, M; Rajan, S,期刊:Applied Physics Letters, 页码:203502-203502 , 文章类型: Article,,卷期:2010年97-20]
  • We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to m...